Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation

Ishaq Ahmad, M. Usman, S. Rabab Naqvi, Javed Iqbal, Lu Bo, Yan Long, Chang Fu Dee, Aslam Baig

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Carbon doping in hexagonal multi-walled boron nitride nanotubes (BNNTs) through ion implantation is successfully achieved. Nuclear reaction analysis confirms that carbon atoms are homogeneously doped into the BNNTs, while Fourier transform infrared spectroscopy reveals that the C-N bonding is produced. Moreover, B-C-N phases are confirmed by X-ray Diffraction and Raman spectroscopy after C+ ion implantation. High resolution transmission electron microscopy results show that BNNTs are slightly damaged by C+ ion implantation. UV absorption spectra show that carbon doping reduces the band gap of BNNTs from 5.5 to 4.6 eV by increasing C+ ion fluence. It is suggested that the bandgap decrease is due to carbon doping as well as defect formation in BNNTs. Carbon implantation in h-BNNTs is proposed to the knockout ejections of B and N atoms by high energy C+ ions and consequently make ternary B-C-N structure.

Original languageEnglish
Article number2170
JournalJournal of Nanoparticle Research
Volume16
Issue number1
DOIs
Publication statusPublished - Jan 2014

Fingerprint

Ion Implantation
Nitrides
Boron nitride
boron nitrides
Nanotubes
Ion implantation
Hexagon
ion implantation
nanotubes
Carbon
Doping (additives)
carbon
Energy gap
Ions
Atoms
Implantation
Nuclear reactions
Infrared Spectroscopy
Raman Spectroscopy
Absorption Spectra

Keywords

  • Boron-carbonitride structure
  • Hexagonal multi-walled boron nitride nanotubes
  • Ion implantation
  • Substitutional carbon doping

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Modelling and Simulation
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering

Cite this

Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation. / Ahmad, Ishaq; Usman, M.; Rabab Naqvi, S.; Iqbal, Javed; Bo, Lu; Long, Yan; Dee, Chang Fu; Baig, Aslam.

In: Journal of Nanoparticle Research, Vol. 16, No. 1, 2170, 01.2014.

Research output: Contribution to journalArticle

Ahmad, Ishaq ; Usman, M. ; Rabab Naqvi, S. ; Iqbal, Javed ; Bo, Lu ; Long, Yan ; Dee, Chang Fu ; Baig, Aslam. / Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation. In: Journal of Nanoparticle Research. 2014 ; Vol. 16, No. 1.
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AU - Bo, Lu

AU - Long, Yan

AU - Dee, Chang Fu

AU - Baig, Aslam

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AB - Carbon doping in hexagonal multi-walled boron nitride nanotubes (BNNTs) through ion implantation is successfully achieved. Nuclear reaction analysis confirms that carbon atoms are homogeneously doped into the BNNTs, while Fourier transform infrared spectroscopy reveals that the C-N bonding is produced. Moreover, B-C-N phases are confirmed by X-ray Diffraction and Raman spectroscopy after C+ ion implantation. High resolution transmission electron microscopy results show that BNNTs are slightly damaged by C+ ion implantation. UV absorption spectra show that carbon doping reduces the band gap of BNNTs from 5.5 to 4.6 eV by increasing C+ ion fluence. It is suggested that the bandgap decrease is due to carbon doping as well as defect formation in BNNTs. Carbon implantation in h-BNNTs is proposed to the knockout ejections of B and N atoms by high energy C+ ions and consequently make ternary B-C-N structure.

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