Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

Su Kong Chong, Boon Tong Goh, Chang Fu Dee, Saadah Abdul Rahman

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Silicon nanowires (SiNWs) were synthesized from indium catalysts on the Si(111) substrate using the hot-wire chemical vapor deposition technique. A tungsten filament with purity of 99.95% was employed for both the evaporation of an indium wire as catalyst and the decomposition of the precursor gas silane diluted in hydrogen. In this study, we investigated the role of the filament temperature (T f) on the growth and structural properties of the SiNWs. A threshold T f for the successive growth of the SiNWs via a vapor-liquid-solid process was observed at T f between 1400 and 1500°C. For T f of 1400°C and below, only a layer of Si shell cladding was formed on the indium core. An increase in T f above the threshold resulted in a significant increase in the number density and the aspect ratio of the SiNWs. X-ray diffraction and micro-Raman measurements indicated an enhancement in crystallinity of the SiNWs with the increase in T f. Fourier transform infrared analysis showed an enhancement in the presence of Si-O and Si-H related bonds with the increase in T f. The Si-O bond is mostly originated from the native oxide layer of SiNWs, while Si-H bond suggests that Si-H x species were responsible for the growth.

Original languageEnglish
Pages (from-to)635-643
Number of pages9
JournalMaterials Chemistry and Physics
Volume135
Issue number2-3
DOIs
Publication statusPublished - 15 Aug 2012

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Indium
Silicon
Nanowires
indium
Chemical vapor deposition
filaments
nanowires
vapor deposition
wire
Wire
silicon
Temperature
temperature
Silanes
catalysts
Catalysts
Tungsten
thresholds
augmentation
silanes

Keywords

  • Chemical vapor deposition (CVD)
  • Crystal growth
  • Nanostructures

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique. / Chong, Su Kong; Goh, Boon Tong; Dee, Chang Fu; Rahman, Saadah Abdul.

In: Materials Chemistry and Physics, Vol. 135, No. 2-3, 15.08.2012, p. 635-643.

Research output: Contribution to journalArticle

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