Study on the prospects of Sb2Te3 back surface field in ZnCdS/ZnCdTe thin film solar cell

Muin Uddin, M. S. Hossain, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper numerically explores the possibility of high efficiency, ultrathin and stable ZnCdTe (CZT) polycrystalline solar cell using well accepted simulator AMPS-1D. The base line structure of the ZnCdTe cell (Glass/ITO/CdS/ZnCdTe/Back Contact) was the beginning point of this work and further this base line structure was modified to achieve ultrathin, higher efficiency and stable solar cell. In modified structure, CdS window layer has been replaced by a wide band gap material ZnxCd1-xS which increase the spectral response in the blue region as well as ZnxCd1-xS window layer was reduced to the extreme limit with insertion of a suitable buffer layer of ZnO in between ITO and window layer to check forward leakage current of ultrathin window layer. To lessen the back surface recombination loss and barrier height at back contact another extra layer (BSF p-Sb2Te3) has been inserted in between p-ZnCdTe layer and back contact (BC). Then the thickness of the window layer and absorber layer of the modified structure has been optimized. The modified structure with back surface field (BSF) layer (Glass/ ITO/ZnO/ZnxCd1-xS/ZnxCd1-xTe/Sb2Te3/BC) shows the highest efficiency of 23.17% (Jsc=33.50 mA/cm2, FF=0.77% and Voc= 0.98V). Finally the temperature effect on cell parameters was investigated and the overall temperature coefficient (TC) of the proposed cell is found to be 0.085%.

Original languageEnglish
Title of host publication2nd International Conference on Electrical Information and Communication Technologies, EICT 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages403-406
Number of pages4
ISBN (Print)9781467392570
DOIs
Publication statusPublished - 25 Jan 2016
Event2nd International Conference on Electrical Information and Communication Technologies, EICT 2015 - Khulna, Bangladesh
Duration: 10 Dec 201512 Dec 2015

Other

Other2nd International Conference on Electrical Information and Communication Technologies, EICT 2015
CountryBangladesh
CityKhulna
Period10/12/1512/12/15

Fingerprint

Thin Film Solar Cells
ITO glass
Solar cells
Buffer layers
Leakage currents
Thermal effects
Contact
Energy gap
High Efficiency
Simulators
Solar Cells
Baseline
Cell
Thin film solar cells
Leakage Current
Spectral Response
Temperature Effect
Absorber
Band Gap
Temperature

Keywords

  • BSF
  • CZT solar cell
  • Photovolatic
  • TFSC
  • ZnCdS

ASJC Scopus subject areas

  • Hardware and Architecture
  • Information Systems
  • Modelling and Simulation
  • Computer Networks and Communications

Cite this

Uddin, M., Hossain, M. S., & Amin, N. (2016). Study on the prospects of Sb2Te3 back surface field in ZnCdS/ZnCdTe thin film solar cell. In 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015 (pp. 403-406). [7391985] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EICT.2015.7391985

Study on the prospects of Sb2Te3 back surface field in ZnCdS/ZnCdTe thin film solar cell. / Uddin, Muin; Hossain, M. S.; Amin, Nowshad.

2nd International Conference on Electrical Information and Communication Technologies, EICT 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 403-406 7391985.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uddin, M, Hossain, MS & Amin, N 2016, Study on the prospects of Sb2Te3 back surface field in ZnCdS/ZnCdTe thin film solar cell. in 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015., 7391985, Institute of Electrical and Electronics Engineers Inc., pp. 403-406, 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015, Khulna, Bangladesh, 10/12/15. https://doi.org/10.1109/EICT.2015.7391985
Uddin M, Hossain MS, Amin N. Study on the prospects of Sb2Te3 back surface field in ZnCdS/ZnCdTe thin film solar cell. In 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 403-406. 7391985 https://doi.org/10.1109/EICT.2015.7391985
Uddin, Muin ; Hossain, M. S. ; Amin, Nowshad. / Study on the prospects of Sb2Te3 back surface field in ZnCdS/ZnCdTe thin film solar cell. 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 403-406
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AB - This paper numerically explores the possibility of high efficiency, ultrathin and stable ZnCdTe (CZT) polycrystalline solar cell using well accepted simulator AMPS-1D. The base line structure of the ZnCdTe cell (Glass/ITO/CdS/ZnCdTe/Back Contact) was the beginning point of this work and further this base line structure was modified to achieve ultrathin, higher efficiency and stable solar cell. In modified structure, CdS window layer has been replaced by a wide band gap material ZnxCd1-xS which increase the spectral response in the blue region as well as ZnxCd1-xS window layer was reduced to the extreme limit with insertion of a suitable buffer layer of ZnO in between ITO and window layer to check forward leakage current of ultrathin window layer. To lessen the back surface recombination loss and barrier height at back contact another extra layer (BSF p-Sb2Te3) has been inserted in between p-ZnCdTe layer and back contact (BC). Then the thickness of the window layer and absorber layer of the modified structure has been optimized. The modified structure with back surface field (BSF) layer (Glass/ ITO/ZnO/ZnxCd1-xS/ZnxCd1-xTe/Sb2Te3/BC) shows the highest efficiency of 23.17% (Jsc=33.50 mA/cm2, FF=0.77% and Voc= 0.98V). Finally the temperature effect on cell parameters was investigated and the overall temperature coefficient (TC) of the proposed cell is found to be 0.085%.

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