Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics

Md. Akhtaruzzaman, Shun Ichiro Ohmi, Jun Ichi Nishida, Yoshiro Yamashita, Hiroshi Ishiwara

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The stability of bottom-gate pentacene-based metal-oxide-semiconductor (MOS) diodes in air up to 30 days was investigated. The capacitance-voltage (C-V) characteristics of the pentacene film in air showed a slight hysteresis (36 mV) without any surface treatment for as-fabricated pentacene-based MOS diodes. However, after 30 days, the hysteresis width further increased to 100mV and flat-band voltages shifted toward positive voltage as well, which indicates that the electron trapping effects become stronger caused by either moisture or oxygen; thus, the stability of pentacene-based MOS diode characteristics degraded gradually.

Original languageEnglish
Article number04C178
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - Apr 2009
Externally publishedYes

Fingerprint

Semiconductor diodes
semiconductor diodes
capacitance-voltage characteristics
metal oxide semiconductors
Capacitance
Hysteresis
air
Electric potential
Air
Metals
hysteresis
electric potential
surface treatment
moisture
Surface treatment
Moisture
trapping
Oxygen
Electrons
oxygen

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics. / Akhtaruzzaman, Md.; Ohmi, Shun Ichiro; Nishida, Jun Ichi; Yamashita, Yoshiro; Ishiwara, Hiroshi.

In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C178, 04.2009.

Research output: Contribution to journalArticle

Akhtaruzzaman, Md. ; Ohmi, Shun Ichiro ; Nishida, Jun Ichi ; Yamashita, Yoshiro ; Ishiwara, Hiroshi. / Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 4 PART 2.
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