Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film

Noorfozila Bahari, Azlina Mohd Zain, Ali Zaini Abdullah, Daniel Bien Chia Sheng, Masuri Othman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The pH-sensing properties of tantalum pentoxide (Ta2O 5) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages76-78
Number of pages3
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka
Duration: 28 Jun 201030 Jun 2010

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CityMelaka
Period28/6/1030/6/10

Fingerprint

Capacitance measurement
Voltage measurement
Tantalum
Thin films
Reactive sputtering
Silicon wafers
Magnetron sputtering
tantalum oxide

Keywords

  • PH-ISFET
  • RF magnetron sputtering
  • Sensing membrane
  • Tantalum pentoxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bahari, N., Zain, A. M., Abdullah, A. Z., Sheng, D. B. C., & Othman, M. (2010). Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 76-78). [5549429] https://doi.org/10.1109/SMELEC.2010.5549429

Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film. / Bahari, Noorfozila; Zain, Azlina Mohd; Abdullah, Ali Zaini; Sheng, Daniel Bien Chia; Othman, Masuri.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 76-78 5549429.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bahari, N, Zain, AM, Abdullah, AZ, Sheng, DBC & Othman, M 2010, Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 5549429, pp. 76-78, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, 28/6/10. https://doi.org/10.1109/SMELEC.2010.5549429
Bahari N, Zain AM, Abdullah AZ, Sheng DBC, Othman M. Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 76-78. 5549429 https://doi.org/10.1109/SMELEC.2010.5549429
Bahari, Noorfozila ; Zain, Azlina Mohd ; Abdullah, Ali Zaini ; Sheng, Daniel Bien Chia ; Othman, Masuri. / Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. pp. 76-78
@inproceedings{025ae21689c2480b89435b5e9ca158cb,
title = "Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film",
abstract = "The pH-sensing properties of tantalum pentoxide (Ta2O 5) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.",
keywords = "PH-ISFET, RF magnetron sputtering, Sensing membrane, Tantalum pentoxide",
author = "Noorfozila Bahari and Zain, {Azlina Mohd} and Abdullah, {Ali Zaini} and Sheng, {Daniel Bien Chia} and Masuri Othman",
year = "2010",
doi = "10.1109/SMELEC.2010.5549429",
language = "English",
isbn = "9781424466092",
pages = "76--78",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

}

TY - GEN

T1 - Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film

AU - Bahari, Noorfozila

AU - Zain, Azlina Mohd

AU - Abdullah, Ali Zaini

AU - Sheng, Daniel Bien Chia

AU - Othman, Masuri

PY - 2010

Y1 - 2010

N2 - The pH-sensing properties of tantalum pentoxide (Ta2O 5) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.

AB - The pH-sensing properties of tantalum pentoxide (Ta2O 5) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.

KW - PH-ISFET

KW - RF magnetron sputtering

KW - Sensing membrane

KW - Tantalum pentoxide

UR - http://www.scopus.com/inward/record.url?scp=77957566764&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957566764&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2010.5549429

DO - 10.1109/SMELEC.2010.5549429

M3 - Conference contribution

SN - 9781424466092

SP - 76

EP - 78

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

ER -