Study on doping effect of Sn doped ZnO thin films for gas sensing application

M. Hannas, A. K. Shafura, Burhanuddin Yeop Majlis, Salman A H Alrokayan, Haseeb A. Khan, M. Rusop

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.

Original languageEnglish
Title of host publication2015 IEEE Student Conference on Research and Development, SCOReD 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages435-440
Number of pages6
ISBN (Print)9781467395724
DOIs
Publication statusPublished - 7 Apr 2016
EventIEEE Student Conference on Research and Development, SCOReD 2015 - Kuala Lumpur, Malaysia
Duration: 13 Dec 201514 Dec 2015

Other

OtherIEEE Student Conference on Research and Development, SCOReD 2015
CountryMalaysia
CityKuala Lumpur
Period13/12/1514/12/15

Fingerprint

Doping (additives)
Thin films
Tin
Gases
Electric properties
Optical properties
Spectrophotometers
Spin coating
Evaporators
Metals
Sol-gels
Electron beams
Porosity
Gold
Nitrogen
Glass
Temperature
Substrates

Keywords

  • Gas sensor
  • Porosity
  • Sensitivity
  • Sol-Gel Spin Coating
  • Tin doped ZnO thin film

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Computer Networks and Communications
  • Computer Science Applications

Cite this

Hannas, M., Shafura, A. K., Yeop Majlis, B., Alrokayan, S. A. H., Khan, H. A., & Rusop, M. (2016). Study on doping effect of Sn doped ZnO thin films for gas sensing application. In 2015 IEEE Student Conference on Research and Development, SCOReD 2015 (pp. 435-440). [7449374] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SCORED.2015.7449374

Study on doping effect of Sn doped ZnO thin films for gas sensing application. / Hannas, M.; Shafura, A. K.; Yeop Majlis, Burhanuddin; Alrokayan, Salman A H; Khan, Haseeb A.; Rusop, M.

2015 IEEE Student Conference on Research and Development, SCOReD 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 435-440 7449374.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hannas, M, Shafura, AK, Yeop Majlis, B, Alrokayan, SAH, Khan, HA & Rusop, M 2016, Study on doping effect of Sn doped ZnO thin films for gas sensing application. in 2015 IEEE Student Conference on Research and Development, SCOReD 2015., 7449374, Institute of Electrical and Electronics Engineers Inc., pp. 435-440, IEEE Student Conference on Research and Development, SCOReD 2015, Kuala Lumpur, Malaysia, 13/12/15. https://doi.org/10.1109/SCORED.2015.7449374
Hannas M, Shafura AK, Yeop Majlis B, Alrokayan SAH, Khan HA, Rusop M. Study on doping effect of Sn doped ZnO thin films for gas sensing application. In 2015 IEEE Student Conference on Research and Development, SCOReD 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 435-440. 7449374 https://doi.org/10.1109/SCORED.2015.7449374
Hannas, M. ; Shafura, A. K. ; Yeop Majlis, Burhanuddin ; Alrokayan, Salman A H ; Khan, Haseeb A. ; Rusop, M. / Study on doping effect of Sn doped ZnO thin films for gas sensing application. 2015 IEEE Student Conference on Research and Development, SCOReD 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 435-440
@inproceedings{975ba443b1e84faea2aded0d035821ff,
title = "Study on doping effect of Sn doped ZnO thin films for gas sensing application",
abstract = "Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. {\%} Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.{\%} doping concentration. The highest porosity of Tin doped ZnO thin film was found 47{\%} at 3.0 at. {\%} Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.",
keywords = "Gas sensor, Porosity, Sensitivity, Sol-Gel Spin Coating, Tin doped ZnO thin film",
author = "M. Hannas and Shafura, {A. K.} and {Yeop Majlis}, Burhanuddin and Alrokayan, {Salman A H} and Khan, {Haseeb A.} and M. Rusop",
year = "2016",
month = "4",
day = "7",
doi = "10.1109/SCORED.2015.7449374",
language = "English",
isbn = "9781467395724",
pages = "435--440",
booktitle = "2015 IEEE Student Conference on Research and Development, SCOReD 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Study on doping effect of Sn doped ZnO thin films for gas sensing application

AU - Hannas, M.

AU - Shafura, A. K.

AU - Yeop Majlis, Burhanuddin

AU - Alrokayan, Salman A H

AU - Khan, Haseeb A.

AU - Rusop, M.

PY - 2016/4/7

Y1 - 2016/4/7

N2 - Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.

AB - Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.

KW - Gas sensor

KW - Porosity

KW - Sensitivity

KW - Sol-Gel Spin Coating

KW - Tin doped ZnO thin film

UR - http://www.scopus.com/inward/record.url?scp=84966659047&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84966659047&partnerID=8YFLogxK

U2 - 10.1109/SCORED.2015.7449374

DO - 10.1109/SCORED.2015.7449374

M3 - Conference contribution

SN - 9781467395724

SP - 435

EP - 440

BT - 2015 IEEE Student Conference on Research and Development, SCOReD 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -