Abstract
Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE Student Conference on Research and Development, SCOReD 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 435-440 |
| Number of pages | 6 |
| ISBN (Print) | 9781467395724 |
| DOIs | |
| Publication status | Published - 7 Apr 2016 |
| Event | IEEE Student Conference on Research and Development, SCOReD 2015 - Kuala Lumpur, Malaysia Duration: 13 Dec 2015 → 14 Dec 2015 |
Other
| Other | IEEE Student Conference on Research and Development, SCOReD 2015 |
|---|---|
| Country | Malaysia |
| City | Kuala Lumpur |
| Period | 13/12/15 → 14/12/15 |
Fingerprint
Keywords
- Gas sensor
- Porosity
- Sensitivity
- Sol-Gel Spin Coating
- Tin doped ZnO thin film
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Energy Engineering and Power Technology
- Computer Networks and Communications
- Computer Science Applications
Cite this
Study on doping effect of Sn doped ZnO thin films for gas sensing application. / Hannas, M.; Shafura, A. K.; Yeop Majlis, Burhanuddin; Alrokayan, Salman A H; Khan, Haseeb A.; Rusop, M.
2015 IEEE Student Conference on Research and Development, SCOReD 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 435-440 7449374.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Study on doping effect of Sn doped ZnO thin films for gas sensing application
AU - Hannas, M.
AU - Shafura, A. K.
AU - Yeop Majlis, Burhanuddin
AU - Alrokayan, Salman A H
AU - Khan, Haseeb A.
AU - Rusop, M.
PY - 2016/4/7
Y1 - 2016/4/7
N2 - Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.
AB - Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.
KW - Gas sensor
KW - Porosity
KW - Sensitivity
KW - Sol-Gel Spin Coating
KW - Tin doped ZnO thin film
UR - http://www.scopus.com/inward/record.url?scp=84966659047&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84966659047&partnerID=8YFLogxK
U2 - 10.1109/SCORED.2015.7449374
DO - 10.1109/SCORED.2015.7449374
M3 - Conference contribution
AN - SCOPUS:84966659047
SN - 9781467395724
SP - 435
EP - 440
BT - 2015 IEEE Student Conference on Research and Development, SCOReD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -