Abstract
Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.
Original language | English |
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Title of host publication | 2015 IEEE Student Conference on Research and Development, SCOReD 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 435-440 |
Number of pages | 6 |
ISBN (Print) | 9781467395724 |
DOIs | |
Publication status | Published - 7 Apr 2016 |
Event | IEEE Student Conference on Research and Development, SCOReD 2015 - Kuala Lumpur, Malaysia Duration: 13 Dec 2015 → 14 Dec 2015 |
Other
Other | IEEE Student Conference on Research and Development, SCOReD 2015 |
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Country | Malaysia |
City | Kuala Lumpur |
Period | 13/12/15 → 14/12/15 |
Fingerprint
Keywords
- Gas sensor
- Porosity
- Sensitivity
- Sol-Gel Spin Coating
- Tin doped ZnO thin film
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Energy Engineering and Power Technology
- Computer Networks and Communications
- Computer Science Applications
Cite this
Study on doping effect of Sn doped ZnO thin films for gas sensing application. / Hannas, M.; Shafura, A. K.; Yeop Majlis, Burhanuddin; Alrokayan, Salman A H; Khan, Haseeb A.; Rusop, M.
2015 IEEE Student Conference on Research and Development, SCOReD 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 435-440 7449374.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Study on doping effect of Sn doped ZnO thin films for gas sensing application
AU - Hannas, M.
AU - Shafura, A. K.
AU - Yeop Majlis, Burhanuddin
AU - Alrokayan, Salman A H
AU - Khan, Haseeb A.
AU - Rusop, M.
PY - 2016/4/7
Y1 - 2016/4/7
N2 - Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.
AB - Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 - 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I-V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The electrical properties show that the Sn:ZnO thin films exhibit Ohmic behavior with Au metal contact. The highest resistivity of Sn doped ZnO thin films found to be 3.17 × 103 cm. And then, the conductivity of the thin films found to be 1.88 × 10-4 Scm-1 for 2.0 at.% doping concentration. The highest porosity of Tin doped ZnO thin film was found 47% at 3.0 at. % Tin. The highest gas response was found 2.53 in the concentration of Nitrogen gas with flowrate 220mL/min at room temperature. The effect of Tin doping concentration of the ZnO thin films for gas sensing application at room temperature will be extensively discussed in this paper.
KW - Gas sensor
KW - Porosity
KW - Sensitivity
KW - Sol-Gel Spin Coating
KW - Tin doped ZnO thin film
UR - http://www.scopus.com/inward/record.url?scp=84966659047&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84966659047&partnerID=8YFLogxK
U2 - 10.1109/SCORED.2015.7449374
DO - 10.1109/SCORED.2015.7449374
M3 - Conference contribution
AN - SCOPUS:84966659047
SN - 9781467395724
SP - 435
EP - 440
BT - 2015 IEEE Student Conference on Research and Development, SCOReD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -