Study of the effects of substrate temperature on the PECVD SiO2 layer using IPL 200 E/D system

Sarkar Mahbub Akhter, Burhanuddin Yeop Majlis, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The thickness of the SiO2 insulating film deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) has been studied. The thickness of the oxidation layer depends upon a numbers of factors. Along with the RF power, the thickness also depends on the flow rate of the two gases, i.e. N2O and SiH4, the reactor pressure and substrate temperature. In this paper the dependence of thickness upon the temperature has been studied with different temperature from 100 °C to 300 °C. While developing the insulation layer the other factors as pressure, flow rate and RF power are kept constant.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages293-296
Number of pages4
Publication statusPublished - 1997
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 26 Nov 199628 Nov 1996

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period26/11/9628/11/96

Fingerprint

Plasma enhanced chemical vapor deposition
Substrates
Flow rate
Temperature
Insulation
Oxidation
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Akhter, S. M., Yeop Majlis, B., & Shaari, S. (1997). Study of the effects of substrate temperature on the PECVD SiO2 layer using IPL 200 E/D system. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 293-296). Piscataway, NJ, United States: IEEE.

Study of the effects of substrate temperature on the PECVD SiO2 layer using IPL 200 E/D system. / Akhter, Sarkar Mahbub; Yeop Majlis, Burhanuddin; Shaari, Sahbudin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. p. 293-296.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akhter, SM, Yeop Majlis, B & Shaari, S 1997, Study of the effects of substrate temperature on the PECVD SiO2 layer using IPL 200 E/D system. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 293-296, Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, 26/11/96.
Akhter SM, Yeop Majlis B, Shaari S. Study of the effects of substrate temperature on the PECVD SiO2 layer using IPL 200 E/D system. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1997. p. 293-296
Akhter, Sarkar Mahbub ; Yeop Majlis, Burhanuddin ; Shaari, Sahbudin. / Study of the effects of substrate temperature on the PECVD SiO2 layer using IPL 200 E/D system. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. pp. 293-296
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