Structural and optical properties of Ga-doped ZnO nanoparticle thin films

Translated title of the contribution: Struktur dan sifat optik filem nipis nanozarah ZnO terdop Ga

Research output: Contribution to journalArticle

Abstract

Ga-doped zinc oxide (ZnO:Ga) thin films were prepared by using sol-gel spin coating method. Different weight percentage, wt. % (0, 2, 4, 6 and 8 wt. %) were doped into ZnO thin films. The effects of Ga dopant on structural and optical properties of these films were investigated. The structural properties of these thin films were studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The optical properties were examined by ultraviolet visible spectroscopy (UV-VIS) and photoluminescence (PL) spectroscopy. XRD measurement indicates that all the samples displayed wurtzite structure. The crystallite size of the films reduced with the increase of Ga concentrations and the surface roughness remarkably decreased. Ga-doping has clearly increased the light transmission percentage for wavelength in the range of 300 - 380 nm as compared to un-doped ZnO film. The optical band gap, Eg and the PL intensity of the films increased with the Ga-doping. The experimental results showed that, smaller crystallite size has an effect on the optical properties of the samples at 0-6% of Ga-doping. Structural transformation has more dominant influence to the Eg value at higher percentage of Ga-doping.

Original languageUndefined/Unknown
Pages (from-to)1663-1670
Number of pages8
JournalSains Malaysiana
Volume42
Issue number11
Publication statusPublished - Nov 2013

Fingerprint

diffractometers
optical properties
thin films
photoluminescence
light transmission
wurtzite
zinc oxides
spectroscopy
coating
field emission
surface roughness
x rays
electron microscopes
microscopes
gels
scanning
wavelengths

Keywords

  • Optical band gap
  • Photoluminescence
  • Sol-gel

ASJC Scopus subject areas

  • General

Cite this

Structural and optical properties of Ga-doped ZnO nanoparticle thin films. / Awang, Rozidawati; Daud, Siti N H M; Yap, Chi Chin; Jumali, Mohammad Hafizuddin; Zainuddin, Zalita.

In: Sains Malaysiana, Vol. 42, No. 11, 11.2013, p. 1663-1670.

Research output: Contribution to journalArticle

@article{36c60447c5874ba1ac1148a7cc33d7f2,
title = "Structural and optical properties of Ga-doped ZnO nanoparticle thin films",
abstract = "Ga-doped zinc oxide (ZnO:Ga) thin films were prepared by using sol-gel spin coating method. Different weight percentage, wt. {\%} (0, 2, 4, 6 and 8 wt. {\%}) were doped into ZnO thin films. The effects of Ga dopant on structural and optical properties of these films were investigated. The structural properties of these thin films were studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The optical properties were examined by ultraviolet visible spectroscopy (UV-VIS) and photoluminescence (PL) spectroscopy. XRD measurement indicates that all the samples displayed wurtzite structure. The crystallite size of the films reduced with the increase of Ga concentrations and the surface roughness remarkably decreased. Ga-doping has clearly increased the light transmission percentage for wavelength in the range of 300 - 380 nm as compared to un-doped ZnO film. The optical band gap, Eg and the PL intensity of the films increased with the Ga-doping. The experimental results showed that, smaller crystallite size has an effect on the optical properties of the samples at 0-6{\%} of Ga-doping. Structural transformation has more dominant influence to the Eg value at higher percentage of Ga-doping.",
keywords = "Optical band gap, Photoluminescence, Sol-gel",
author = "Rozidawati Awang and Daud, {Siti N H M} and Yap, {Chi Chin} and Jumali, {Mohammad Hafizuddin} and Zalita Zainuddin",
year = "2013",
month = "11",
language = "Undefined/Unknown",
volume = "42",
pages = "1663--1670",
journal = "Sains Malaysiana",
issn = "0126-6039",
publisher = "Penerbit Universiti Kebangsaan Malaysia",
number = "11",

}

TY - JOUR

T1 - Structural and optical properties of Ga-doped ZnO nanoparticle thin films

AU - Awang, Rozidawati

AU - Daud, Siti N H M

AU - Yap, Chi Chin

AU - Jumali, Mohammad Hafizuddin

AU - Zainuddin, Zalita

PY - 2013/11

Y1 - 2013/11

N2 - Ga-doped zinc oxide (ZnO:Ga) thin films were prepared by using sol-gel spin coating method. Different weight percentage, wt. % (0, 2, 4, 6 and 8 wt. %) were doped into ZnO thin films. The effects of Ga dopant on structural and optical properties of these films were investigated. The structural properties of these thin films were studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The optical properties were examined by ultraviolet visible spectroscopy (UV-VIS) and photoluminescence (PL) spectroscopy. XRD measurement indicates that all the samples displayed wurtzite structure. The crystallite size of the films reduced with the increase of Ga concentrations and the surface roughness remarkably decreased. Ga-doping has clearly increased the light transmission percentage for wavelength in the range of 300 - 380 nm as compared to un-doped ZnO film. The optical band gap, Eg and the PL intensity of the films increased with the Ga-doping. The experimental results showed that, smaller crystallite size has an effect on the optical properties of the samples at 0-6% of Ga-doping. Structural transformation has more dominant influence to the Eg value at higher percentage of Ga-doping.

AB - Ga-doped zinc oxide (ZnO:Ga) thin films were prepared by using sol-gel spin coating method. Different weight percentage, wt. % (0, 2, 4, 6 and 8 wt. %) were doped into ZnO thin films. The effects of Ga dopant on structural and optical properties of these films were investigated. The structural properties of these thin films were studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The optical properties were examined by ultraviolet visible spectroscopy (UV-VIS) and photoluminescence (PL) spectroscopy. XRD measurement indicates that all the samples displayed wurtzite structure. The crystallite size of the films reduced with the increase of Ga concentrations and the surface roughness remarkably decreased. Ga-doping has clearly increased the light transmission percentage for wavelength in the range of 300 - 380 nm as compared to un-doped ZnO film. The optical band gap, Eg and the PL intensity of the films increased with the Ga-doping. The experimental results showed that, smaller crystallite size has an effect on the optical properties of the samples at 0-6% of Ga-doping. Structural transformation has more dominant influence to the Eg value at higher percentage of Ga-doping.

KW - Optical band gap

KW - Photoluminescence

KW - Sol-gel

UR - http://www.scopus.com/inward/record.url?scp=84887682421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887682421&partnerID=8YFLogxK

M3 - Article

VL - 42

SP - 1663

EP - 1670

JO - Sains Malaysiana

JF - Sains Malaysiana

SN - 0126-6039

IS - 11

ER -