Structural, Morphological, and Electron Transport Studies of Annealing Dependent In<inf>2</inf>O<inf>3</inf> Dye-Sensitized Solar Cell

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Abstract

Indium oxide (In<inf>2</inf>O<inf>3</inf>) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In<inf>2</inf>O<inf>3</inf> thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In<inf>2</inf>O<inf>3</inf> thin films. The structural and morphological characteristics of In<inf>2</inf>O<inf>3</inf> thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In<inf>2</inf>O<inf>3</inf> thin films viewed through FESEM images. The In<inf>2</inf>O<inf>3</inf>-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In<inf>2</inf>O<inf>3</inf>-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC.

Original languageEnglish
Article number403848
JournalScientific World Journal
Volume2015
DOIs
Publication statusPublished - 2015

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annealing
Electron Transport
dye
Coloring Agents
Annealing
Thin films
electron
Electron Scanning Microscopy
Electrons
Dielectric Spectroscopy
Temperature
Nanostructures
Atomic Force Microscopy
Motion Pictures
Transmission Electron Microscopy
Genetic Recombination
Field emission
scanning electron microscopy
indium
Scanning electron microscopy

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)
  • Environmental Science(all)
  • Medicine(all)

Cite this

@article{b9bdd019b464439a822a95404fe469d2,
title = "Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell",
abstract = "Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54{\%}. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC.",
author = "S. Mahalingam and Huda Abdullah and S. Shaari and Andanastuti Muchtar and Izamarlina Asshaari",
year = "2015",
doi = "10.1155/2015/403848",
language = "English",
volume = "2015",
journal = "Scientific World Journal",
issn = "2356-6140",
publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell

AU - Mahalingam, S.

AU - Abdullah, Huda

AU - Shaari, S.

AU - Muchtar, Andanastuti

AU - Asshaari, Izamarlina

PY - 2015

Y1 - 2015

N2 - Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC.

AB - Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC.

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