Structural damage of Si-implanted in the In0.53Ga0.47As thin film

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Damage profiling of implanted ions in semiconductor's layer is crucial in order to accurately estimate the ion distribution and concentration in the target substrates. It also gives the predicted number of vacancies and interstitials after the collision events. This is particularly important prior to the ion implantation so as to reduce the defect formation and damage to the target's lattice which subsequently degrade the performance of the device. In this paper, we studied the optimized energy and range of ions implanted silicon in In0.53Ga0.47As film by utilizing the Stopping Range of Ions in Matter (SRIM) simulation. The effects of implantation energy in different thickness are also discussed based on creation of phonons, vacancies and ionization.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages244-247
Number of pages4
ISBN (Print)9781479957606
DOIs
Publication statusPublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur
Duration: 27 Aug 201429 Aug 2014

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CityKuala Lumpur
Period27/8/1429/8/14

Fingerprint

Ions
Thin films
Vacancies
Silicon
Phonons
Ion implantation
Ionization
Semiconductor materials
Defects
Substrates

Keywords

  • depth profiles
  • implantation energy
  • Silicon implantation
  • SRIM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Roslan, M. Z., Berhanuddin, D. D., Mohamed, M. A., Mohd Razip Wee, M. F., Larki, F., & Yeop Majlis, B. (2014). Structural damage of Si-implanted in the In0.53Ga0.47As thin film. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 244-247). [6920842] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920842

Structural damage of Si-implanted in the In0.53Ga0.47As thin film. / Roslan, Muhammad Zulkhairi; Berhanuddin, Dilla Duryha; Mohamed, Mohd Ambri; Mohd Razip Wee, Mohd Farhanulhakim; Larki, Farhad; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 244-247 6920842.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Roslan, MZ, Berhanuddin, DD, Mohamed, MA, Mohd Razip Wee, MF, Larki, F & Yeop Majlis, B 2014, Structural damage of Si-implanted in the In0.53Ga0.47As thin film. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920842, Institute of Electrical and Electronics Engineers Inc., pp. 244-247, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, 27/8/14. https://doi.org/10.1109/SMELEC.2014.6920842
Roslan MZ, Berhanuddin DD, Mohamed MA, Mohd Razip Wee MF, Larki F, Yeop Majlis B. Structural damage of Si-implanted in the In0.53Ga0.47As thin film. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 244-247. 6920842 https://doi.org/10.1109/SMELEC.2014.6920842
Roslan, Muhammad Zulkhairi ; Berhanuddin, Dilla Duryha ; Mohamed, Mohd Ambri ; Mohd Razip Wee, Mohd Farhanulhakim ; Larki, Farhad ; Yeop Majlis, Burhanuddin. / Structural damage of Si-implanted in the In0.53Ga0.47As thin film. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 244-247
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