Structural characteristics of thermally grown SiO 2 prepared by a home made furnace

Ab Fatah Awang Mat, Hamdan Musa, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structural differences of thermally grown SO 2 prepared at three different gas mixture was studied using infrared measurement, refractive index and the selective etching techniques. The data shows that the highest degree of porosity is found in the materials grown in ammonia atmosphere.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages200-202
Number of pages3
Publication statusPublished - 2000
Event2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000 - Port Dickson
Duration: 13 Nov 200015 Nov 2000

Other

Other2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000
CityPort Dickson
Period13/11/0015/11/00

Fingerprint

Ammonia
Gas mixtures
Etching
Refractive index
Furnaces
Porosity
Infrared radiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mat, A. F. A., Musa, H., & Yeop Majlis, B. (2000). Structural characteristics of thermally grown SiO 2 prepared by a home made furnace. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 200-202). [932463]

Structural characteristics of thermally grown SiO 2 prepared by a home made furnace. / Mat, Ab Fatah Awang; Musa, Hamdan; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. p. 200-202 932463.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mat, AFA, Musa, H & Yeop Majlis, B 2000, Structural characteristics of thermally grown SiO 2 prepared by a home made furnace. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 932463, pp. 200-202, 2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000, Port Dickson, 13/11/00.
Mat AFA, Musa H, Yeop Majlis B. Structural characteristics of thermally grown SiO 2 prepared by a home made furnace. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. p. 200-202. 932463
Mat, Ab Fatah Awang ; Musa, Hamdan ; Yeop Majlis, Burhanuddin. / Structural characteristics of thermally grown SiO 2 prepared by a home made furnace. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. pp. 200-202
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