Structural and electrophysical properties of ZnTe and ZnxCd1-xTe films obtained by chemical vapor-phase deposition

T. M. Razykov

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Producing the physical properties of films of the semiconductor compounds are critical in connection with their use in optoelectronic devices. The difficulty of synthesizing their uniform composition over large areas with specified electrophysical properties prevents the practical use of these compounds. The article examines the structure and resistivity of the films depending on the concentration ratio of the vapor mixture's components in the reaction space Zn/Te and composition of the solid solutions. Electrical resistivity depends on composition.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalApplied Solar Energy (English translation of Geliotekhnika)
Volume24
Issue number4
Publication statusPublished - 1988
Externally publishedYes

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Vapors
Chemical analysis
Optoelectronic devices
Solid solutions
Physical properties
Semiconductor materials

ASJC Scopus subject areas

  • Fuel Technology
  • Renewable Energy, Sustainability and the Environment

Cite this

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abstract = "Producing the physical properties of films of the semiconductor compounds are critical in connection with their use in optoelectronic devices. The difficulty of synthesizing their uniform composition over large areas with specified electrophysical properties prevents the practical use of these compounds. The article examines the structure and resistivity of the films depending on the concentration ratio of the vapor mixture's components in the reaction space Zn/Te and composition of the solid solutions. Electrical resistivity depends on composition.",
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