Structural and electron-hopping studies of Pr and Nd substituted La 2/3Ba1/3MnO3 manganites

Huda Abdullah, S. A. Halim

Research output: Contribution to journalArticle

Abstract

The significance of substituting concentrations of Pr and Nd at La-sites, in La0.67Ba0.33MnO3 perovskite compounds, for the structural and electrical properties have been studied. Polycrystalline samples (La1-x Prx)0.67Ba 0.33MnO3 and (La1-xNdx) 0.67Ba0.33MnO3 with x = 0.00, 0.167, 0.333, 0.5, 0.667, 0.833 and 1.0 were synthesized via conventional solid-state reaction in the bulk. All of the samples were calcined at 900°C for 12 hours, pelletized and sintered at 1300°C for 24 hours and investigated. In this paper the structural patterns and micro structural properties of bulk samples have been investigated via x-ray diffractometry (XRD) and scanning electron microscopy (SEM). XRD patterns show that these systems are single-phase, with orthorhombic distorted perovskite structures. The electrical property, T p, was determined by using standard four-point probe resistivity measurements in the temperature range of 20 K to 300 K. The result shows that Pr and Nd dopants shift the value of Tp to a lower temperature. When the temperature is above Tp, T > Tp, the variation of the electrical resistance was found to follow the an Arhenius-type law, ρ = ρ0 exp (-Ea/KBT). It was used to calculate the activation energy of every sample. The resistivity curves show semiconducting behavior of all samples above their Tp.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalDefect and Diffusion Forum
Volume282
DOIs
Publication statusPublished - 2008

Fingerprint

Manganites
Perovskite
Electrons
Structural properties
Electric properties
X rays
Acoustic impedance
electrons
Solid state reactions
Temperature
electrical properties
Activation energy
Doping (additives)
electrical resistivity
Scanning electron microscopy
electrical resistance
x rays
activation energy
solid state
scanning electron microscopy

Keywords

  • Arrhenius-type law activation energy (E)
  • Meta-insulator transistor temperature (T)
  • Resistivity (ρ)

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Radiation

Cite this

Structural and electron-hopping studies of Pr and Nd substituted La 2/3Ba1/3MnO3 manganites. / Abdullah, Huda; Halim, S. A.

In: Defect and Diffusion Forum, Vol. 282, 2008, p. 1-8.

Research output: Contribution to journalArticle

@article{2031bce07d2e465688f9f4b0376c3dbc,
title = "Structural and electron-hopping studies of Pr and Nd substituted La 2/3Ba1/3MnO3 manganites",
abstract = "The significance of substituting concentrations of Pr and Nd at La-sites, in La0.67Ba0.33MnO3 perovskite compounds, for the structural and electrical properties have been studied. Polycrystalline samples (La1-x Prx)0.67Ba 0.33MnO3 and (La1-xNdx) 0.67Ba0.33MnO3 with x = 0.00, 0.167, 0.333, 0.5, 0.667, 0.833 and 1.0 were synthesized via conventional solid-state reaction in the bulk. All of the samples were calcined at 900°C for 12 hours, pelletized and sintered at 1300°C for 24 hours and investigated. In this paper the structural patterns and micro structural properties of bulk samples have been investigated via x-ray diffractometry (XRD) and scanning electron microscopy (SEM). XRD patterns show that these systems are single-phase, with orthorhombic distorted perovskite structures. The electrical property, T p, was determined by using standard four-point probe resistivity measurements in the temperature range of 20 K to 300 K. The result shows that Pr and Nd dopants shift the value of Tp to a lower temperature. When the temperature is above Tp, T > Tp, the variation of the electrical resistance was found to follow the an Arhenius-type law, ρ = ρ0 exp (-Ea/KBT). It was used to calculate the activation energy of every sample. The resistivity curves show semiconducting behavior of all samples above their Tp.",
keywords = "Arrhenius-type law activation energy (E), Meta-insulator transistor temperature (T), Resistivity (ρ)",
author = "Huda Abdullah and Halim, {S. A.}",
year = "2008",
doi = "10.4028/3-908451-63-9.1",
language = "English",
volume = "282",
pages = "1--8",
journal = "Defect and Diffusion Forum",
issn = "1012-0386",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Structural and electron-hopping studies of Pr and Nd substituted La 2/3Ba1/3MnO3 manganites

AU - Abdullah, Huda

AU - Halim, S. A.

PY - 2008

Y1 - 2008

N2 - The significance of substituting concentrations of Pr and Nd at La-sites, in La0.67Ba0.33MnO3 perovskite compounds, for the structural and electrical properties have been studied. Polycrystalline samples (La1-x Prx)0.67Ba 0.33MnO3 and (La1-xNdx) 0.67Ba0.33MnO3 with x = 0.00, 0.167, 0.333, 0.5, 0.667, 0.833 and 1.0 were synthesized via conventional solid-state reaction in the bulk. All of the samples were calcined at 900°C for 12 hours, pelletized and sintered at 1300°C for 24 hours and investigated. In this paper the structural patterns and micro structural properties of bulk samples have been investigated via x-ray diffractometry (XRD) and scanning electron microscopy (SEM). XRD patterns show that these systems are single-phase, with orthorhombic distorted perovskite structures. The electrical property, T p, was determined by using standard four-point probe resistivity measurements in the temperature range of 20 K to 300 K. The result shows that Pr and Nd dopants shift the value of Tp to a lower temperature. When the temperature is above Tp, T > Tp, the variation of the electrical resistance was found to follow the an Arhenius-type law, ρ = ρ0 exp (-Ea/KBT). It was used to calculate the activation energy of every sample. The resistivity curves show semiconducting behavior of all samples above their Tp.

AB - The significance of substituting concentrations of Pr and Nd at La-sites, in La0.67Ba0.33MnO3 perovskite compounds, for the structural and electrical properties have been studied. Polycrystalline samples (La1-x Prx)0.67Ba 0.33MnO3 and (La1-xNdx) 0.67Ba0.33MnO3 with x = 0.00, 0.167, 0.333, 0.5, 0.667, 0.833 and 1.0 were synthesized via conventional solid-state reaction in the bulk. All of the samples were calcined at 900°C for 12 hours, pelletized and sintered at 1300°C for 24 hours and investigated. In this paper the structural patterns and micro structural properties of bulk samples have been investigated via x-ray diffractometry (XRD) and scanning electron microscopy (SEM). XRD patterns show that these systems are single-phase, with orthorhombic distorted perovskite structures. The electrical property, T p, was determined by using standard four-point probe resistivity measurements in the temperature range of 20 K to 300 K. The result shows that Pr and Nd dopants shift the value of Tp to a lower temperature. When the temperature is above Tp, T > Tp, the variation of the electrical resistance was found to follow the an Arhenius-type law, ρ = ρ0 exp (-Ea/KBT). It was used to calculate the activation energy of every sample. The resistivity curves show semiconducting behavior of all samples above their Tp.

KW - Arrhenius-type law activation energy (E)

KW - Meta-insulator transistor temperature (T)

KW - Resistivity (ρ)

UR - http://www.scopus.com/inward/record.url?scp=59149098036&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59149098036&partnerID=8YFLogxK

U2 - 10.4028/3-908451-63-9.1

DO - 10.4028/3-908451-63-9.1

M3 - Article

VL - 282

SP - 1

EP - 8

JO - Defect and Diffusion Forum

JF - Defect and Diffusion Forum

SN - 1012-0386

ER -