Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre

Dilla Duryha Berhanuddin, M. A. Lourenço, C. Jeynes, M. Milosavljević, R. M. Gwilliam, K. P. Homewood

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation.

Original languageEnglish
Article number103110
JournalJournal of Applied Physics
Volume112
Issue number10
DOIs
Publication statusPublished - 15 Nov 2012

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proton energy
structural analysis
lasing
carbon
silicon
interstitials
backscattering
proton irradiation
large scale integration
spectroscopy
implantation
wafers
luminescence
damage
photoluminescence
transmission electron microscopy
irradiation
protons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. / Berhanuddin, Dilla Duryha; Lourenço, M. A.; Jeynes, C.; Milosavljević, M.; Gwilliam, R. M.; Homewood, K. P.

In: Journal of Applied Physics, Vol. 112, No. 10, 103110, 15.11.2012.

Research output: Contribution to journalArticle

Berhanuddin, Dilla Duryha ; Lourenço, M. A. ; Jeynes, C. ; Milosavljević, M. ; Gwilliam, R. M. ; Homewood, K. P. / Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. In: Journal of Applied Physics. 2012 ; Vol. 112, No. 10.
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