Strain modification of band edge energies in a pyramidal InAs-GaAs quantum dot system

Gregory Henry Ripan, Geri Kibe Gopir, Ahmad Puaad Othman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We present the calculated band edge energies altered by strain in a nanostructure system of a pyramidal InAs quantum dot buried in a GaAs substrate. Our zinc-blende supercell system of dimension 11.9 nm × 11.9 nm × 8.5 nm and 55119 atoms contains a pyramidal In 770As 886 quantum dot of 1656 atoms with height of 3.03 nm and square base of length 6.06 nm. The strain energy of this nanostructure system was minimized by employing the Keating formulation of interatomic potential and Monte Carlo relaxation method via the Metropolis algorithm. This relaxation was run for 20 million Monte Carlo steps at simulation temperature of 4.2 K. The calculated strain was then used to determine the conduction and valence band edge energies of the nanostructure. We found that along the [001] growth direction in the InAs quantum dot region, strain increases the conduction band edge energy by 0.6 eV and in the valence band strain resulted in relatively sharp wells at the dot base for heavy holes and at the dot tip for light holes. Thus, our calculation predicted that strain leads to increase band gap and spatial splitting of holes in this nanostructure system.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages337-341
Number of pages5
Volume501
DOIs
Publication statusPublished - 2012
Event26th Regional Conference on Solid State Science and Technology, RCSSST 2011 - Seremban, Negeri Sembilan
Duration: 22 Nov 201124 Nov 2011

Publication series

NameAdvanced Materials Research
Volume501
ISSN (Print)10226680

Other

Other26th Regional Conference on Solid State Science and Technology, RCSSST 2011
CitySeremban, Negeri Sembilan
Period22/11/1124/11/11

Fingerprint

Semiconductor quantum dots
Nanostructures
Valence bands
Conduction bands
Atoms
Strain energy
Energy gap
Zinc
Substrates
Temperature

Keywords

  • Inas-GaAs quantum dot
  • Keating potential
  • Metropolis Monte Carlo
  • Nanostructure valence force field
  • Strain and band edge energy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ripan, G. H., Gopir, G. K., & Othman, A. P. (2012). Strain modification of band edge energies in a pyramidal InAs-GaAs quantum dot system. In Advanced Materials Research (Vol. 501, pp. 337-341). (Advanced Materials Research; Vol. 501). https://doi.org/10.4028/www.scientific.net/AMR.501.337

Strain modification of band edge energies in a pyramidal InAs-GaAs quantum dot system. / Ripan, Gregory Henry; Gopir, Geri Kibe; Othman, Ahmad Puaad.

Advanced Materials Research. Vol. 501 2012. p. 337-341 (Advanced Materials Research; Vol. 501).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ripan, GH, Gopir, GK & Othman, AP 2012, Strain modification of band edge energies in a pyramidal InAs-GaAs quantum dot system. in Advanced Materials Research. vol. 501, Advanced Materials Research, vol. 501, pp. 337-341, 26th Regional Conference on Solid State Science and Technology, RCSSST 2011, Seremban, Negeri Sembilan, 22/11/11. https://doi.org/10.4028/www.scientific.net/AMR.501.337
Ripan GH, Gopir GK, Othman AP. Strain modification of band edge energies in a pyramidal InAs-GaAs quantum dot system. In Advanced Materials Research. Vol. 501. 2012. p. 337-341. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.501.337
Ripan, Gregory Henry ; Gopir, Geri Kibe ; Othman, Ahmad Puaad. / Strain modification of band edge energies in a pyramidal InAs-GaAs quantum dot system. Advanced Materials Research. Vol. 501 2012. pp. 337-341 (Advanced Materials Research).
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