Straightforward fabrication of low schottky barrier single-walled carbon nanotube transistors by direct growth method

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single-walled carbon nanotubes field-effect transistors was fabricated by means of direct growth method. The structural of as grown CNTs directly from electrodes and the transport characteristics of the FET have been studied. SWNTs were successfully bridged the FET electrodes. For the FET device configuration in this study, the field-effectiveness can be related as VGS:VDS = 10:-1. The enhancement of current can be attributed to the reduction of activation energy. Clear correlation between the effects of bias voltage, gate voltage and activation energy has been observed. Device operation was consistent with operation of Schottky-type FET with small Ea value of 170 meV. Ideal Schottky barrier formation for electron injection was realized in this device configuration. This study contributed to a straightforward fabrication of CNT-FET with high performance without the need of pre-deposition or post-deposition of CNTs in the FET channel.

Original languageEnglish
Title of host publicationProceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages100-103
Number of pages4
ISBN (Electronic)9781509040285
DOIs
Publication statusPublished - 16 Oct 2017
Event11th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017 - Batu Ferringhi, Penang, Malaysia
Duration: 23 Aug 201725 Aug 2017

Other

Other11th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017
CountryMalaysia
CityBatu Ferringhi, Penang
Period23/8/1725/8/17

Fingerprint

Single-walled carbon nanotubes (SWCN)
Field effect transistors
Transistors
transistors
field effect transistors
carbon nanotubes
Fabrication
fabrication
Activation energy
Carbon nanotube field effect transistors
Electrodes
Electron injection
activation energy
Bias voltage
electrodes
electric potential
configurations
injection
Electric potential
augmentation

Keywords

  • activation energy
  • Field-effectiveness
  • Schottky barrier
  • Single-walled carbon nanotubes (SWNTs)
  • transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Biomedical Engineering

Cite this

Mohamed, M. A., & Yeop Majlis, B. (2017). Straightforward fabrication of low schottky barrier single-walled carbon nanotube transistors by direct growth method. In Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017 (pp. 100-103). [8069155] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RSM.2017.8069155

Straightforward fabrication of low schottky barrier single-walled carbon nanotube transistors by direct growth method. / Mohamed, Mohd Ambri; Yeop Majlis, Burhanuddin.

Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 100-103 8069155.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mohamed, MA & Yeop Majlis, B 2017, Straightforward fabrication of low schottky barrier single-walled carbon nanotube transistors by direct growth method. in Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017., 8069155, Institute of Electrical and Electronics Engineers Inc., pp. 100-103, 11th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017, Batu Ferringhi, Penang, Malaysia, 23/8/17. https://doi.org/10.1109/RSM.2017.8069155
Mohamed MA, Yeop Majlis B. Straightforward fabrication of low schottky barrier single-walled carbon nanotube transistors by direct growth method. In Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 100-103. 8069155 https://doi.org/10.1109/RSM.2017.8069155
Mohamed, Mohd Ambri ; Yeop Majlis, Burhanuddin. / Straightforward fabrication of low schottky barrier single-walled carbon nanotube transistors by direct growth method. Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 100-103
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