Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants

Muhammad Faiz Bukhori, Scott Roy, Asen Asenov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A comprehensive three-dimensional (3-D) statistical simulation study of the distribution of fractional current change and threshold voltage shifts in real 35 nm bulk MOSFETs due to a single charge trapping at the Si/SiO2 interface is presented. The devices used in the simulations closely replicate the geometry and the complex doping profile of a real n-channel 35 nm bulk MOSFET developed and published by Toshiba. The simulations are performed at three different gate biases for both low and high drain voltages, subject to random discrete dopant effects. The role of the strategic position where the trapped electron blocks a dominant percolation current path in a device with microscopically different discrete doping configurations is highlighted.

Original languageEnglish
Title of host publicationULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
Pages171-174
Number of pages4
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event9th International Conference on ULtimate Integration of Silicon, ULIS 2008 -
Duration: 13 Mar 200814 Mar 2008

Other

Other9th International Conference on ULtimate Integration of Silicon, ULIS 2008
Period13/3/0814/3/08

Fingerprint

Doping (additives)
Charge trapping
Threshold voltage
Geometry
Electrons
Electric potential

Keywords

  • 3-D simulation
  • MOSFET
  • Random dopants
  • Random telegraph signals
  • Trapping

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Bukhori, M. F., Roy, S., & Asenov, A. (2008). Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. In ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon (pp. 171-174). [4527166] https://doi.org/10.1109/ULIS.2008.4527166

Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. / Bukhori, Muhammad Faiz; Roy, Scott; Asenov, Asen.

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon. 2008. p. 171-174 4527166.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bukhori, MF, Roy, S & Asenov, A 2008, Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. in ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon., 4527166, pp. 171-174, 9th International Conference on ULtimate Integration of Silicon, ULIS 2008, 13/3/08. https://doi.org/10.1109/ULIS.2008.4527166
Bukhori MF, Roy S, Asenov A. Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. In ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon. 2008. p. 171-174. 4527166 https://doi.org/10.1109/ULIS.2008.4527166
Bukhori, Muhammad Faiz ; Roy, Scott ; Asenov, Asen. / Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon. 2008. pp. 171-174
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