Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants

Muhammad Faiz Bukhori, Scott Roy, Asen Asenov

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We present a 3D statistical simulation study of the distribution of fractional current change and threshold voltage shift in an ensemble of realistic 35 nm bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO2 interface, taking simultaneously into account random discrete dopant in the transistors and the statistically realistic distribution of traps. The role of strategically positioned defect states and their statistical distribution in generating 'anomalously' large current and threshold voltage change in devices with microscopically different discrete doping configurations is highlighted.

Original languageEnglish
Pages (from-to)1549-1552
Number of pages4
JournalMicroelectronics Reliability
Volume48
Issue number8-9
DOIs
Publication statusPublished - Aug 2008
Externally publishedYes

Fingerprint

Threshold voltage
threshold voltage
field effect transistors
Doping (additives)
Charge trapping
Defects
defects
electric potential
statistical distributions
Transistors
transistors
trapping
traps
shift
configurations
simulation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants. / Bukhori, Muhammad Faiz; Roy, Scott; Asenov, Asen.

In: Microelectronics Reliability, Vol. 48, No. 8-9, 08.2008, p. 1549-1552.

Research output: Contribution to journalArticle

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