SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode

P. Susthitha Menon N V Visvanathan, Kumarajah Kandiah, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) is a a cheap and affordable device to meet growing demands of optical communication networks operating at speeds below 10 Gbps. A ILPP model utilizing In0.53Ga0.47As as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical equation was developed to predict the signal-to-noise (SNR) ratio of ILPP devices as a function of design factors. The analytical equation was used to predict SNR values for experimentally developed devices from the literature.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages292-296
Number of pages5
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor
Duration: 25 Nov 200827 Nov 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CityJohor Bahru, Johor
Period25/11/0827/11/08

Fingerprint

Photodiodes
Optical communication
Fiber optic networks
Telecommunication networks
Signal to noise ratio

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

N V Visvanathan, P. S. M., Kandiah, K., & Shaari, S. (2008). SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 292-296). [4770326] https://doi.org/10.1109/SMELEC.2008.4770326

SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode. / N V Visvanathan, P. Susthitha Menon; Kandiah, Kumarajah; Shaari, Sahbudin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 292-296 4770326.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

N V Visvanathan, PSM, Kandiah, K & Shaari, S 2008, SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4770326, pp. 292-296, 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, Johor Bahru, Johor, 25/11/08. https://doi.org/10.1109/SMELEC.2008.4770326
N V Visvanathan PSM, Kandiah K, Shaari S. SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 292-296. 4770326 https://doi.org/10.1109/SMELEC.2008.4770326
N V Visvanathan, P. Susthitha Menon ; Kandiah, Kumarajah ; Shaari, Sahbudin. / SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. pp. 292-296
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