Single transverse mode photonic crystal VCSEL with trench patterning

Mohd Sharizal Alias, Sahbudin Shaari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constant and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.

    Original languageEnglish
    Title of host publication2010 International Conference on Photonics, ICP2010
    DOIs
    Publication statusPublished - 2010
    Event2010 1st International Conference on Photonics, ICP2010 - Langkawi, Kedah
    Duration: 5 Jul 20107 Jul 2010

    Other

    Other2010 1st International Conference on Photonics, ICP2010
    CityLangkawi, Kedah
    Period5/7/107/7/10

    Fingerprint

    Surface emitting lasers
    Laser modes
    Photonic crystals
    Oxides
    Lattice constants
    Air

    Keywords

    • GaAs
    • Laser diode
    • Photonic crystal
    • VCSEL

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Alias, M. S., & Shaari, S. (2010). Single transverse mode photonic crystal VCSEL with trench patterning. In 2010 International Conference on Photonics, ICP2010 [5604388] https://doi.org/10.1109/ICP.2010.5604388

    Single transverse mode photonic crystal VCSEL with trench patterning. / Alias, Mohd Sharizal; Shaari, Sahbudin.

    2010 International Conference on Photonics, ICP2010. 2010. 5604388.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Alias, MS & Shaari, S 2010, Single transverse mode photonic crystal VCSEL with trench patterning. in 2010 International Conference on Photonics, ICP2010., 5604388, 2010 1st International Conference on Photonics, ICP2010, Langkawi, Kedah, 5/7/10. https://doi.org/10.1109/ICP.2010.5604388
    Alias MS, Shaari S. Single transverse mode photonic crystal VCSEL with trench patterning. In 2010 International Conference on Photonics, ICP2010. 2010. 5604388 https://doi.org/10.1109/ICP.2010.5604388
    Alias, Mohd Sharizal ; Shaari, Sahbudin. / Single transverse mode photonic crystal VCSEL with trench patterning. 2010 International Conference on Photonics, ICP2010. 2010.
    @inproceedings{8c9485c3f3e3434797c8d461a4892a61,
    title = "Single transverse mode photonic crystal VCSEL with trench patterning",
    abstract = "Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constant and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.",
    keywords = "GaAs, Laser diode, Photonic crystal, VCSEL",
    author = "Alias, {Mohd Sharizal} and Sahbudin Shaari",
    year = "2010",
    doi = "10.1109/ICP.2010.5604388",
    language = "English",
    isbn = "9781424471874",
    booktitle = "2010 International Conference on Photonics, ICP2010",

    }

    TY - GEN

    T1 - Single transverse mode photonic crystal VCSEL with trench patterning

    AU - Alias, Mohd Sharizal

    AU - Shaari, Sahbudin

    PY - 2010

    Y1 - 2010

    N2 - Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constant and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.

    AB - Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constant and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.

    KW - GaAs

    KW - Laser diode

    KW - Photonic crystal

    KW - VCSEL

    UR - http://www.scopus.com/inward/record.url?scp=78349253875&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=78349253875&partnerID=8YFLogxK

    U2 - 10.1109/ICP.2010.5604388

    DO - 10.1109/ICP.2010.5604388

    M3 - Conference contribution

    SN - 9781424471874

    BT - 2010 International Conference on Photonics, ICP2010

    ER -