Simulation of statistical aspects of reliability in nano CMOS transistors

Muhammad Faiz Bukhori, Andrew R. Brown, Scott Roy, Asen Asenov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

The evolution of the threshold voltage distribution in an ensemble of realistic n- and p- channel bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO2 interface due to NBTI/PBTI is studied using 3-D statistical simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps, could result in rare but dramatic changes in the transistor characteristics.

Original languageEnglish
Title of host publicationIEEE International Integrated Reliability Workshop Final Report
Pages82-85
Number of pages4
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 IEEE International Integrated Reliability Workshop, IIRW 2009 - South Lake Tahoe, CA
Duration: 18 Oct 200922 Oct 2009

Other

Other2009 IEEE International Integrated Reliability Workshop, IIRW 2009
CitySouth Lake Tahoe, CA
Period18/10/0922/10/09

Fingerprint

Transistors
Charge trapping
Threshold voltage
Doping (additives)
Defects
4-nitrobenzylthioinosine
Negative bias temperature instability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Bukhori, M. F., Brown, A. R., Roy, S., & Asenov, A. (2009). Simulation of statistical aspects of reliability in nano CMOS transistors. In IEEE International Integrated Reliability Workshop Final Report (pp. 82-85). [5383028] https://doi.org/10.1109/IRWS.2009.5383028

Simulation of statistical aspects of reliability in nano CMOS transistors. / Bukhori, Muhammad Faiz; Brown, Andrew R.; Roy, Scott; Asenov, Asen.

IEEE International Integrated Reliability Workshop Final Report. 2009. p. 82-85 5383028.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bukhori, MF, Brown, AR, Roy, S & Asenov, A 2009, Simulation of statistical aspects of reliability in nano CMOS transistors. in IEEE International Integrated Reliability Workshop Final Report., 5383028, pp. 82-85, 2009 IEEE International Integrated Reliability Workshop, IIRW 2009, South Lake Tahoe, CA, 18/10/09. https://doi.org/10.1109/IRWS.2009.5383028
Bukhori MF, Brown AR, Roy S, Asenov A. Simulation of statistical aspects of reliability in nano CMOS transistors. In IEEE International Integrated Reliability Workshop Final Report. 2009. p. 82-85. 5383028 https://doi.org/10.1109/IRWS.2009.5383028
Bukhori, Muhammad Faiz ; Brown, Andrew R. ; Roy, Scott ; Asenov, Asen. / Simulation of statistical aspects of reliability in nano CMOS transistors. IEEE International Integrated Reliability Workshop Final Report. 2009. pp. 82-85
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