Simulation of statistical aspects of charge trapping and related degradation in bulk mosfets in the presence of random discrete dopants

Muhammad Faiz Bukhori, Scott Roy, Asen Asenov

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The distribution of fractional current change and threshold voltage shift in an ensemble of realistic 35 nm bulk negative-channel metaloxidesemiconductor field-effect transistors caused by charge trapping on stress-generated defect states at the Si/SiO2 interface is studied using 3-D statistical atomistic simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps could result in rare but dramatic changes in the transistor characteristics. The evolution of threshold voltage distribution as a result of accumulation of trapped charges in the devices due to progressive negative bias temperature instability, positive bias temperature instability, or hot electron degradation is simulated and compared with simple analytical model predictions and recently published experimental measurements to demonstrate the necessity to consider statistical variability in realistic reliability simulations. The magnitude of the degradation in devices of different geometries is also investigated where minimal correlation is found.

Original languageEnglish
Article number5419117
Pages (from-to)795-803
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume57
Issue number4
DOIs
Publication statusPublished - Apr 2010
Externally publishedYes

Fingerprint

Charge trapping
Threshold voltage
Transistors
Doping (additives)
Degradation
Hot electrons
Field effect transistors
Analytical models
Defects
Geometry
Temperature
Negative bias temperature instability

Keywords

  • MOSFET
  • Numerical simulation
  • Random dopants
  • Random telegraph signal (RTS)
  • Reliability
  • Variability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Simulation of statistical aspects of charge trapping and related degradation in bulk mosfets in the presence of random discrete dopants. / Bukhori, Muhammad Faiz; Roy, Scott; Asenov, Asen.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 4, 5419117, 04.2010, p. 795-803.

Research output: Contribution to journalArticle

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