Simulation of a novel lateral H structure PIN InGaAs photodiode with consistent electron drift length

Loo Chee Hong Esther, Sahbudin Shaari, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the microscopic view of electron captured in a lateral PIN InGaAs photodiodes which was implemented on an H electrode structure. The results illustrated a near ideal generated current with minimal delay time. We assumed the structure was implemented in a 10Gbps, 30Gbs and 50Gbps network with a PIN sensitivity of 3OdBm with incident light power at 0.1mW. The sizes of the electrodes range from 7mu;m to 8μm at 0.8 and 0.5 intrinsic-junction ratio respectively. The fastest response 1,210,900,945 A/W of the device was obtained through a simulator study.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages52-57
Number of pages6
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

Photodiodes
Electrodes
Electrons
Time delay
Simulators

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Esther, L. C. H., Shaari, S., & Yeop Majlis, B. (2006). Simulation of a novel lateral H structure PIN InGaAs photodiode with consistent electron drift length. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 52-57). [4266568] https://doi.org/10.1109/SMELEC.2006.381018

Simulation of a novel lateral H structure PIN InGaAs photodiode with consistent electron drift length. / Esther, Loo Chee Hong; Shaari, Sahbudin; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 52-57 4266568.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Esther, LCH, Shaari, S & Yeop Majlis, B 2006, Simulation of a novel lateral H structure PIN InGaAs photodiode with consistent electron drift length. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266568, pp. 52-57, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.381018
Esther LCH, Shaari S, Yeop Majlis B. Simulation of a novel lateral H structure PIN InGaAs photodiode with consistent electron drift length. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 52-57. 4266568 https://doi.org/10.1109/SMELEC.2006.381018
Esther, Loo Chee Hong ; Shaari, Sahbudin ; Yeop Majlis, Burhanuddin. / Simulation of a novel lateral H structure PIN InGaAs photodiode with consistent electron drift length. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 52-57
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