Silicon nitride passivation of silicon nanowires solar cell

E. S M Ashour, M. Y. Sulaiman, Nowshad Amin, Zahari Ibarahim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Vertical aligned silicon nanowires were synthesized using chemical etching of silicon wafer. Influence of a silicon nitride layer on the top of the silicon nanowires solar cell has been investigated. The optical properties of a Si NWs array with and without silicon nitride passivation layer are examined in terms of optical reflection property. In the presence of silicon nitride layer, 1% reflection ratio in the spectral range (250-1000nm) is achieved. In addition, the solar cell characteristics have been significantly improved, which exhibits high short circuit current as well high efficiency. Based on the current-voltage measurements and morphology results, we show that the silicon nitride layer can passivate the defects generated by wet etching processes.

Original languageEnglish
Article number012021
JournalJournal of Physics: Conference Series
Volume431
Issue number1
DOIs
Publication statusPublished - 2013

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silicon nitrides
passivity
nanowires
solar cells
silicon
etching
optical reflection
short circuit currents
electrical measurement
wafers
optical properties
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Silicon nitride passivation of silicon nanowires solar cell. / Ashour, E. S M; Sulaiman, M. Y.; Amin, Nowshad; Ibarahim, Zahari.

In: Journal of Physics: Conference Series, Vol. 431, No. 1, 012021, 2013.

Research output: Contribution to journalArticle

Ashour, E. S M ; Sulaiman, M. Y. ; Amin, Nowshad ; Ibarahim, Zahari. / Silicon nitride passivation of silicon nanowires solar cell. In: Journal of Physics: Conference Series. 2013 ; Vol. 431, No. 1.
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