Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching

Lita Rahmasari, Mohd Faizol Abdullah, Md Zain Ahmad Rifqi, Abdul Manaf Hashim

Research output: Contribution to journalArticle

Abstract

The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide.

Original languageEnglish
Pages (from-to)1157-1161
Number of pages5
JournalSains Malaysiana
Volume48
Issue number6
DOIs
Publication statusPublished - 1 Jan 2019

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lithography
etching
electron beams
silicon
ions
optical waveguides
dosage
fabrication

Keywords

  • Electron beam lithography
  • Reactive ion etching
  • Silicon nanohole

ASJC Scopus subject areas

  • General

Cite this

Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching. / Rahmasari, Lita; Abdullah, Mohd Faizol; Ahmad Rifqi, Md Zain; Hashim, Abdul Manaf.

In: Sains Malaysiana, Vol. 48, No. 6, 01.01.2019, p. 1157-1161.

Research output: Contribution to journalArticle

Rahmasari, Lita ; Abdullah, Mohd Faizol ; Ahmad Rifqi, Md Zain ; Hashim, Abdul Manaf. / Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching. In: Sains Malaysiana. 2019 ; Vol. 48, No. 6. pp. 1157-1161.
@article{4380e650ee6d4b13b745e8b8e13d5c7e,
title = "Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching",
abstract = "The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide.",
keywords = "Electron beam lithography, Reactive ion etching, Silicon nanohole",
author = "Lita Rahmasari and Abdullah, {Mohd Faizol} and {Ahmad Rifqi}, {Md Zain} and Hashim, {Abdul Manaf}",
year = "2019",
month = "1",
day = "1",
doi = "10.17576/jsm-2019-4806-01",
language = "English",
volume = "48",
pages = "1157--1161",
journal = "Sains Malaysiana",
issn = "0126-6039",
publisher = "Penerbit Universiti Kebangsaan Malaysia",
number = "6",

}

TY - JOUR

T1 - Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching

AU - Rahmasari, Lita

AU - Abdullah, Mohd Faizol

AU - Ahmad Rifqi, Md Zain

AU - Hashim, Abdul Manaf

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide.

AB - The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide.

KW - Electron beam lithography

KW - Reactive ion etching

KW - Silicon nanohole

UR - http://www.scopus.com/inward/record.url?scp=85069610586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069610586&partnerID=8YFLogxK

U2 - 10.17576/jsm-2019-4806-01

DO - 10.17576/jsm-2019-4806-01

M3 - Article

AN - SCOPUS:85069610586

VL - 48

SP - 1157

EP - 1161

JO - Sains Malaysiana

JF - Sains Malaysiana

SN - 0126-6039

IS - 6

ER -