Self-mixing displacement sensing using the junction voltage variation in a GaN laser

Russell Kliese, Yah Leng Lim, Karl Bertling, Ahmad Ashrif A Bakar, Thierry Bosch, Aleksandar D. Rakic

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The self-mixing (SM) laser sensing technique allows a simple, self-aligned and robust system for measuring displacement. Low-cost blue emitting GaN laser diodes have recently become available due to the high volume requirements for Blu-ray Disc devices such as high-definition video players and gaming consoles. These GaN lasers have a significantly shorter wavelength (around 405 nm) compared to other semiconductor lasers (generally around 800 nm for SM sensors). Therefore, if used in SM displacement sensors, they provide significantly higher resolution. Further to that, the measurement resolution is affected by the ability of the system to properly interpret the movement corresponding to the fraction of the half wavelength of the laser resulting in an incomplete fringe. Doubling the number of fringes will reduce the global error when a fringe is not properly detected. In this paper we report the world's first SM displacement measurement system based on junction voltage variation in blue emitting semiconductor lasers. Instead of monitoring the SM signals using a photo-diode, the signal is obtained via direct sensing of the laser junction voltage variation. This removes the need for a photo-diode, providing a cost reduction and increasing the reliability of the system. The sensitivity and precision of this system is evaluated and compared against the performance of systems using red (650 nm) and near IR (780 nm) laser based sensors with all three sensors sharing the same optical and electronic hardware.

Original languageEnglish
Title of host publicationConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Pages23-25
Number of pages3
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW
Duration: 28 Jul 20081 Aug 2008

Other

Other2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
CitySydney, NSW
Period28/7/081/8/08

Fingerprint

Semiconductor lasers
Lasers
Electric potential
Sensors
Diodes
Wavelength
Displacement measurement
Cost reduction
Hardware
Monitoring
Costs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kliese, R., Lim, Y. L., Bertling, K., A Bakar, A. A., Bosch, T., & Rakic, A. D. (2008). Self-mixing displacement sensing using the junction voltage variation in a GaN laser. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 23-25). [4802083] https://doi.org/10.1109/COMMAD.2008.4802083

Self-mixing displacement sensing using the junction voltage variation in a GaN laser. / Kliese, Russell; Lim, Yah Leng; Bertling, Karl; A Bakar, Ahmad Ashrif; Bosch, Thierry; Rakic, Aleksandar D.

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. 2008. p. 23-25 4802083.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kliese, R, Lim, YL, Bertling, K, A Bakar, AA, Bosch, T & Rakic, AD 2008, Self-mixing displacement sensing using the junction voltage variation in a GaN laser. in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD., 4802083, pp. 23-25, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, 28/7/08. https://doi.org/10.1109/COMMAD.2008.4802083
Kliese R, Lim YL, Bertling K, A Bakar AA, Bosch T, Rakic AD. Self-mixing displacement sensing using the junction voltage variation in a GaN laser. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. 2008. p. 23-25. 4802083 https://doi.org/10.1109/COMMAD.2008.4802083
Kliese, Russell ; Lim, Yah Leng ; Bertling, Karl ; A Bakar, Ahmad Ashrif ; Bosch, Thierry ; Rakic, Aleksandar D. / Self-mixing displacement sensing using the junction voltage variation in a GaN laser. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. 2008. pp. 23-25
@inproceedings{c1420575daa24e1b941df00200824a21,
title = "Self-mixing displacement sensing using the junction voltage variation in a GaN laser",
abstract = "The self-mixing (SM) laser sensing technique allows a simple, self-aligned and robust system for measuring displacement. Low-cost blue emitting GaN laser diodes have recently become available due to the high volume requirements for Blu-ray Disc devices such as high-definition video players and gaming consoles. These GaN lasers have a significantly shorter wavelength (around 405 nm) compared to other semiconductor lasers (generally around 800 nm for SM sensors). Therefore, if used in SM displacement sensors, they provide significantly higher resolution. Further to that, the measurement resolution is affected by the ability of the system to properly interpret the movement corresponding to the fraction of the half wavelength of the laser resulting in an incomplete fringe. Doubling the number of fringes will reduce the global error when a fringe is not properly detected. In this paper we report the world's first SM displacement measurement system based on junction voltage variation in blue emitting semiconductor lasers. Instead of monitoring the SM signals using a photo-diode, the signal is obtained via direct sensing of the laser junction voltage variation. This removes the need for a photo-diode, providing a cost reduction and increasing the reliability of the system. The sensitivity and precision of this system is evaluated and compared against the performance of systems using red (650 nm) and near IR (780 nm) laser based sensors with all three sensors sharing the same optical and electronic hardware.",
author = "Russell Kliese and Lim, {Yah Leng} and Karl Bertling and {A Bakar}, {Ahmad Ashrif} and Thierry Bosch and Rakic, {Aleksandar D.}",
year = "2008",
doi = "10.1109/COMMAD.2008.4802083",
language = "English",
isbn = "9781424427178",
pages = "23--25",
booktitle = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

}

TY - GEN

T1 - Self-mixing displacement sensing using the junction voltage variation in a GaN laser

AU - Kliese, Russell

AU - Lim, Yah Leng

AU - Bertling, Karl

AU - A Bakar, Ahmad Ashrif

AU - Bosch, Thierry

AU - Rakic, Aleksandar D.

PY - 2008

Y1 - 2008

N2 - The self-mixing (SM) laser sensing technique allows a simple, self-aligned and robust system for measuring displacement. Low-cost blue emitting GaN laser diodes have recently become available due to the high volume requirements for Blu-ray Disc devices such as high-definition video players and gaming consoles. These GaN lasers have a significantly shorter wavelength (around 405 nm) compared to other semiconductor lasers (generally around 800 nm for SM sensors). Therefore, if used in SM displacement sensors, they provide significantly higher resolution. Further to that, the measurement resolution is affected by the ability of the system to properly interpret the movement corresponding to the fraction of the half wavelength of the laser resulting in an incomplete fringe. Doubling the number of fringes will reduce the global error when a fringe is not properly detected. In this paper we report the world's first SM displacement measurement system based on junction voltage variation in blue emitting semiconductor lasers. Instead of monitoring the SM signals using a photo-diode, the signal is obtained via direct sensing of the laser junction voltage variation. This removes the need for a photo-diode, providing a cost reduction and increasing the reliability of the system. The sensitivity and precision of this system is evaluated and compared against the performance of systems using red (650 nm) and near IR (780 nm) laser based sensors with all three sensors sharing the same optical and electronic hardware.

AB - The self-mixing (SM) laser sensing technique allows a simple, self-aligned and robust system for measuring displacement. Low-cost blue emitting GaN laser diodes have recently become available due to the high volume requirements for Blu-ray Disc devices such as high-definition video players and gaming consoles. These GaN lasers have a significantly shorter wavelength (around 405 nm) compared to other semiconductor lasers (generally around 800 nm for SM sensors). Therefore, if used in SM displacement sensors, they provide significantly higher resolution. Further to that, the measurement resolution is affected by the ability of the system to properly interpret the movement corresponding to the fraction of the half wavelength of the laser resulting in an incomplete fringe. Doubling the number of fringes will reduce the global error when a fringe is not properly detected. In this paper we report the world's first SM displacement measurement system based on junction voltage variation in blue emitting semiconductor lasers. Instead of monitoring the SM signals using a photo-diode, the signal is obtained via direct sensing of the laser junction voltage variation. This removes the need for a photo-diode, providing a cost reduction and increasing the reliability of the system. The sensitivity and precision of this system is evaluated and compared against the performance of systems using red (650 nm) and near IR (780 nm) laser based sensors with all three sensors sharing the same optical and electronic hardware.

UR - http://www.scopus.com/inward/record.url?scp=64849109601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64849109601&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2008.4802083

DO - 10.1109/COMMAD.2008.4802083

M3 - Conference contribution

SN - 9781424427178

SP - 23

EP - 25

BT - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

ER -