Schottky contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au

Asban Dolah, Muhammad Azmi Abdul Hamid, Mohamad Deraman, Ashaari Yusof, Nor Azhadi Ngah, Norman Fadhil Idham Muhammad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An interface layer between a metal and a semiconductor, can either be an Ohmic or Schottky contact. Schottky is barrier height defined the rectifying properties of the device. In manufacturing semiconductor devices, Schottky contact on metal-semiconductor interface are essentially for achieving good rectifying properties. In this study, Schottky contact were fabricated on AlGaAs HEMTs structure. An AlGaAs epi wafer was supply by the vendor. AlGaAs substrate was cleaned using wet chemical etching. Electrodes were fabricated through a sequenced of lithography, cleaning, sputtering and lift-off processes. The electrodes were made with metal layers of Ge, Au and Ni. Parameters such as metal thickness and annealing temperatures (from 300oC to 400 oC) were vary during fabrication process. Electrical characterizations after annealing are carried out using current-voltage (I-V) measurement are used to calculated Schottky barrier and Ideality Factor. The Schottky barrier increased with increasing annealing temperature until 400°C however Schottky barriers height and Ideality Factor does not varies much with metallization time. The highest Schottky barrier achieved is below 1.0eV with Ideality Factor 5.

Original languageEnglish
Title of host publicationProceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics
Pages134-138
Number of pages5
DOIs
Publication statusPublished - 2013
Event2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 - Langkawi
Duration: 25 Sep 201327 Sep 2013

Other

Other2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013
CityLangkawi
Period25/9/1327/9/13

Fingerprint

High electron mobility transistors
Metallizing
Annealing
Metals
Semiconductor materials
Electrodes
Wet etching
Semiconductor devices
Lithography
Sputtering
Cleaning
Fabrication
Temperature
Electric potential
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Dolah, A., Abdul Hamid, M. A., Deraman, M., Yusof, A., Ngah, N. A., & Muhammad, N. F. I. (2013). Schottky contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics (pp. 134-138). [6706491] https://doi.org/10.1109/RSM.2013.6706491

Schottky contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. / Dolah, Asban; Abdul Hamid, Muhammad Azmi; Deraman, Mohamad; Yusof, Ashaari; Ngah, Nor Azhadi; Muhammad, Norman Fadhil Idham.

Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 134-138 6706491.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dolah, A, Abdul Hamid, MA, Deraman, M, Yusof, A, Ngah, NA & Muhammad, NFI 2013, Schottky contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. in Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics., 6706491, pp. 134-138, 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013, Langkawi, 25/9/13. https://doi.org/10.1109/RSM.2013.6706491
Dolah A, Abdul Hamid MA, Deraman M, Yusof A, Ngah NA, Muhammad NFI. Schottky contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 134-138. 6706491 https://doi.org/10.1109/RSM.2013.6706491
Dolah, Asban ; Abdul Hamid, Muhammad Azmi ; Deraman, Mohamad ; Yusof, Ashaari ; Ngah, Nor Azhadi ; Muhammad, Norman Fadhil Idham. / Schottky contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. pp. 134-138
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