S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler

Research output: Contribution to journalArticle

Abstract

S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 μm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 μm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 μm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system.

Original languageEnglish
Pages (from-to)3299-3305
Number of pages7
JournalInternational Journal of Electrical and Computer Engineering
Volume7
Issue number6
DOIs
Publication statusPublished - 1 Dec 2017

Fingerprint

Directional couplers
Waveguides
Silicon
Beam propagation method
Wavelength

Keywords

  • Asymmetrical waveguide
  • S-bend spacing
  • S-bend waveguide
  • SOI LCRW
  • Symmetrical waveguide

ASJC Scopus subject areas

  • Computer Science(all)
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

@article{d0f0e656193e4109a1718d1c2ca94b30,
title = "S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler",
abstract = "S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 μm of waveguide spacing. It achieved 92.24{\%} and 91.10{\%} of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 μm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 μm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system.",
keywords = "Asymmetrical waveguide, S-bend spacing, S-bend waveguide, SOI LCRW, Symmetrical waveguide",
author = "Nurdiani Zamhari and Ehsan, {Abang Annuar} and {Ab Rahman}, {Mohd Syuhaimi}",
year = "2017",
month = "12",
day = "1",
doi = "10.11591/ijece.v7i6.pp3299-3305",
language = "English",
volume = "7",
pages = "3299--3305",
journal = "International Journal of Electrical and Computer Engineering",
issn = "2088-8708",
publisher = "Institute of Advanced Engineering and Science (IAES)",
number = "6",

}

TY - JOUR

T1 - S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler

AU - Zamhari, Nurdiani

AU - Ehsan, Abang Annuar

AU - Ab Rahman, Mohd Syuhaimi

PY - 2017/12/1

Y1 - 2017/12/1

N2 - S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 μm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 μm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 μm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system.

AB - S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 μm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 μm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 μm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system.

KW - Asymmetrical waveguide

KW - S-bend spacing

KW - S-bend waveguide

KW - SOI LCRW

KW - Symmetrical waveguide

UR - http://www.scopus.com/inward/record.url?scp=85032217145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032217145&partnerID=8YFLogxK

U2 - 10.11591/ijece.v7i6.pp3299-3305

DO - 10.11591/ijece.v7i6.pp3299-3305

M3 - Article

VL - 7

SP - 3299

EP - 3305

JO - International Journal of Electrical and Computer Engineering

JF - International Journal of Electrical and Computer Engineering

SN - 2088-8708

IS - 6

ER -