Room temperature photoluminescence intensity enhancement in GaAs 1-xBi x alloys

Abdul Rahman Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P R David

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The optical properties of GaAs 1-xBi x alloys with Bi compositions between 0.022 and 0.06 have been studied by photoluminescence (PL). The samples were grown at 400 °C using molecular beam epitaxy. At room temperature, the incorporation of Bi in GaAs reduces the band gap by 64 meV/%Bi with peak wavelength of 1.2 μm for x = 0.06. It was found that room temperature PL intensity increased with Bi composition, but decreases with composition at 10 K. The results at 10 K suggest that the incorporation of Bi degrades the crystal quality. However, the effect is negated by more efficient carrier confinement as a result of larger band gap offset between GaAs 1-xBi x and GaAs at room temperature. Hence, the room temperature PL intensity continues to increase monotonically for x up to 0.06.

Original languageEnglish
Pages (from-to)259-261
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number2
DOIs
Publication statusPublished - Feb 2012

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photoluminescence
augmentation
room temperature
molecular beam epitaxy
optical properties
wavelengths
crystals

Keywords

  • Bismuth semiconductor
  • GaAsBi
  • MBE
  • Photoluminescence

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Room temperature photoluminescence intensity enhancement in GaAs 1-xBi x alloys. / Mohmad, Abdul Rahman; Bastiman, F.; Ng, J. S.; Sweeney, S. J.; David, J. P R.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 2, 02.2012, p. 259-261.

Research output: Contribution to journalArticle

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