Role of Ti phases in the modulation of border traps at the TiO 2/n-Si interfaces

F. Nasim, A. Ali, Mohammad Hafizuddin Jumali, A. S. Bhatti

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Charge accumulation at interfaces is a key issue for the use of high dielectric constant materials in nanoelectronics. In this work, we report the charge accumulation behavior at the TiO 2/n-Si interfaces formed at various growth temperatures. Growth of TiO 2 in an oxygen deficient environment led to the formation of rutile phase in the as-grown films. The anatase phase was recovered by annealing in air and the ratio of anatase to rutile phase in the TiO 2 films improved considerably. The amount of charge accumulation and the direction of charge injection were studied by obtaining C-V hysteresis curves in the as-grown and the annealed TiO 2 films. It was observed that the amount of accumulated charges decreased as the density of interface border traps dropped considerably due to annealing. X-ray photo-electron spectroscopy revealed the presence of two major phases corresponding to TiO 2 and Ti 2O 3, due to the existence of oxygen deficiencies. The annealing in air resulted in appreciable increase in the weight percentage of TiO 2 phase in samples grown at high temperatures. The healing of oxygen vacancies improved with the increase in the weight percentage of TiO 2. Thus, it was concluded that the accumulated charges were mainly due to oxygen deficiencies and the healing of oxygen defects led to a drop in the interface charges, thus, bringing the interface close to ideal.

Original languageEnglish
Article number044513
JournalJournal of Applied Physics
Volume112
Issue number4
DOIs
Publication statusPublished - 15 Aug 2012

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borders
traps
modulation
hypoxia
healing
anatase
rutile
annealing
oxygen
air
hysteresis
photoelectron spectroscopy
permittivity
injection
defects
curves
x rays
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Role of Ti phases in the modulation of border traps at the TiO 2/n-Si interfaces. / Nasim, F.; Ali, A.; Jumali, Mohammad Hafizuddin; Bhatti, A. S.

In: Journal of Applied Physics, Vol. 112, No. 4, 044513, 15.08.2012.

Research output: Contribution to journalArticle

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