Robust modeling of SOI-based optical phase modulator using free carrier dispersion effect

B. Mardiana, P. Susthitha Menon N V Visvanathan, Sahbudin Shaari, H. Hazura, A. R. Hanim, Norhana Arsad

Research output: Contribution to journalArticle

Abstract

This paper reports the effect and optimization of design parameters of a silicon-on-insulator (SOI) optical waveguide phase modulator using Taguchi method. The modulator employing the p-i-n diode structure will be working based on free carrier dispersion effect at 1.55μm optical telecommunication wavelength. The optimization is focus to minimize the tradeoff between refractive index change and absorption loss in the device's performance. Four design parameters were explored, namely applied voltage, doping concentration, doping position and waveguide rib area. In addition, four noise factors were also included to achieve robustness of the proposed device design which is the annealing temperatures for both the p- doped and n-doped wells as well as the phosphorous and boron implant energy for both the p-doped and n-doped wells. The level of importance of the design parameters on the refractive index change and absorption loss were determined using Analysis of Variance (ANOVA). The optimum process parameter combination was obtained using the analysis of Signal-to- Noise (S/N) ratio. It was discovered that the applied voltage is the most dominant factor in determining the response of the modulator. The results show that the refractive index change and absorption loss upon Taguchi optimization is 0.00155 and 19.9dB/cm respectively.

Original languageEnglish
Pages (from-to)346-353
Number of pages8
JournalOptoelectronics and Advanced Materials, Rapid Communications
Volume7
Issue number5-6
Publication statusPublished - 2013

Fingerprint

Silicon
Modulators
Refractive index
Doping (additives)
Taguchi methods
Boron
Electric potential
Optical waveguides
Analysis of variance (ANOVA)
Telecommunication
Signal to noise ratio
Diodes
Waveguides
Annealing
Wavelength
Temperature

Keywords

  • Free carrier dispersion effect
  • Optical phase modulator
  • Optimization
  • Silicon-on-insulator (SOI)
  • Taguchi method

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Robust modeling of SOI-based optical phase modulator using free carrier dispersion effect. / Mardiana, B.; N V Visvanathan, P. Susthitha Menon; Shaari, Sahbudin; Hazura, H.; Hanim, A. R.; Arsad, Norhana.

In: Optoelectronics and Advanced Materials, Rapid Communications, Vol. 7, No. 5-6, 2013, p. 346-353.

Research output: Contribution to journalArticle

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