RIE-texturing of industrial multicrystalline silicon solar cells

Douglas S. Ruby, Saleem H. Zaidi, S. Narayanan, Satoshi Yamanaka, Ruben Balanga

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.

Original languageEnglish
Pages (from-to)146-149
Number of pages4
JournalJournal of Solar Energy Engineering, Transactions of the ASME
Volume127
Issue number1
DOIs
Publication statusPublished - Feb 2005
Externally publishedYes

Fingerprint

Texturing
Silicon solar cells
Reactive ion etching
Plasmas
Quantum efficiency

Keywords

  • Multicrystalline Silicon
  • Plasma-Texturization
  • Reactive Ion Etching
  • Reflectance Control

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology
  • Mechanical Engineering
  • Renewable Energy, Sustainability and the Environment

Cite this

RIE-texturing of industrial multicrystalline silicon solar cells. / Ruby, Douglas S.; Zaidi, Saleem H.; Narayanan, S.; Yamanaka, Satoshi; Balanga, Ruben.

In: Journal of Solar Energy Engineering, Transactions of the ASME, Vol. 127, No. 1, 02.2005, p. 146-149.

Research output: Contribution to journalArticle

Ruby, Douglas S. ; Zaidi, Saleem H. ; Narayanan, S. ; Yamanaka, Satoshi ; Balanga, Ruben. / RIE-texturing of industrial multicrystalline silicon solar cells. In: Journal of Solar Energy Engineering, Transactions of the ASME. 2005 ; Vol. 127, No. 1. pp. 146-149.
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