Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array

P. Susthitha Menon N V Visvanathan, S. Kalthom Tasirin, Ibrahim Ahmad, S. Fazlili Abdullah, P. R. Apte

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI)-based lateral PIN photodiodes using SiGe/Si multilayer quantum wells (MQW) are suitable for applications in the near-infrared range both for sensing and optical fiber communication application. The objective of this paper is to optimize the process parameters for such a device using Taguchi's L27 orthogonal array. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. The results obtained for responsivity after the optimization approach was 0.33 A/W for the optimized device with intrinsic region length of 6 μm, photo-absorption layer thickness of 0.505 μm, incident optical power of 0.5 mW/cm2, bias voltage of 3.5 V and SOI layer thickness of 0.5 μm. The percentage of improvement for the device's responsivity is 27% as compared to the previous work.

Original languageEnglish
Title of host publicationProceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics
Pages254-257
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 - Langkawi
Duration: 25 Sep 201327 Sep 2013

Other

Other2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013
CityLangkawi
Period25/9/1327/9/13

Fingerprint

Photodiodes
Semiconductor quantum wells
Multilayers
Optical fiber communication
Silicon
Bias voltage
Infrared radiation
Fabrication

Keywords

  • L orthogonal array
  • photodiode
  • quantum dot
  • SiGe/Si
  • SOI
  • Taguchi method

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

N V Visvanathan, P. S. M., Tasirin, S. K., Ahmad, I., Abdullah, S. F., & Apte, P. R. (2013). Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics (pp. 254-257). [6706523] https://doi.org/10.1109/RSM.2013.6706523

Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array. / N V Visvanathan, P. Susthitha Menon; Tasirin, S. Kalthom; Ahmad, Ibrahim; Abdullah, S. Fazlili; Apte, P. R.

Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 254-257 6706523.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

N V Visvanathan, PSM, Tasirin, SK, Ahmad, I, Abdullah, SF & Apte, PR 2013, Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array. in Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics., 6706523, pp. 254-257, 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013, Langkawi, 25/9/13. https://doi.org/10.1109/RSM.2013.6706523
N V Visvanathan PSM, Tasirin SK, Ahmad I, Abdullah SF, Apte PR. Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 254-257. 6706523 https://doi.org/10.1109/RSM.2013.6706523
N V Visvanathan, P. Susthitha Menon ; Tasirin, S. Kalthom ; Ahmad, Ibrahim ; Abdullah, S. Fazlili ; Apte, P. R. / Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array. Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. pp. 254-257
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title = "Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array",
abstract = "Silicon-on-insulator (SOI)-based lateral PIN photodiodes using SiGe/Si multilayer quantum wells (MQW) are suitable for applications in the near-infrared range both for sensing and optical fiber communication application. The objective of this paper is to optimize the process parameters for such a device using Taguchi's L27 orthogonal array. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. The results obtained for responsivity after the optimization approach was 0.33 A/W for the optimized device with intrinsic region length of 6 μm, photo-absorption layer thickness of 0.505 μm, incident optical power of 0.5 mW/cm2, bias voltage of 3.5 V and SOI layer thickness of 0.5 μm. The percentage of improvement for the device's responsivity is 27{\%} as compared to the previous work.",
keywords = "L orthogonal array, photodiode, quantum dot, SiGe/Si, SOI, Taguchi method",
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AU - Abdullah, S. Fazlili

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AB - Silicon-on-insulator (SOI)-based lateral PIN photodiodes using SiGe/Si multilayer quantum wells (MQW) are suitable for applications in the near-infrared range both for sensing and optical fiber communication application. The objective of this paper is to optimize the process parameters for such a device using Taguchi's L27 orthogonal array. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. The results obtained for responsivity after the optimization approach was 0.33 A/W for the optimized device with intrinsic region length of 6 μm, photo-absorption layer thickness of 0.505 μm, incident optical power of 0.5 mW/cm2, bias voltage of 3.5 V and SOI layer thickness of 0.5 μm. The percentage of improvement for the device's responsivity is 27% as compared to the previous work.

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