Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Chung Ming Chu, Yueh Chin Lin, Wei I. Lee, Chang Fu Dee, Yuen Yee Wong, Burhanuddin Yeop Majlis, Muhamad Mat Salleh, Seong Ling Yap, Edward Yi Chang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

This study investigates the time-dependent dielectric breakdown (TDDB) characteristics of La2O3/HfO2 and HfO2/La2O3 stacking layers on an n-In0.53Ga0.47As metal-oxide-semiconductor capacitor. Both designs improved the reliability compared with a single layer of HfO2. The TDDB followed the thermochemical E model. The current transportation mechanism changed from thermionic emission to Frenkel-Poole emission because of the traps creation under voltage stress. Both designs resulted in similar lifespans and voltage accelerating factors. However, the La2O3/HfO2 design had a longer lifespan because of the lower interface trap density and insertion of the HfO2 diffusion barrier layer between La2O3 and n-In0.53Ga0.47As. The oxide stacks exhibited excellent reliability and achieved a lifespan of 28.4 years.

Original languageEnglish
Article number021203
JournalApplied Physics Express
Volume9
Issue number2
DOIs
Publication statusPublished - 1 Feb 2016

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metal oxide semiconductors
capacitors
Capacitors
Electric breakdown
breakdown
Metals
traps
Thermionic emission
Diffusion barriers
thermionic emission
Electric potential
electric potential
barrier layers
insertion
Oxides
oxides
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor. / Chu, Chung Ming; Lin, Yueh Chin; Lee, Wei I.; Dee, Chang Fu; Wong, Yuen Yee; Yeop Majlis, Burhanuddin; Mat Salleh, Muhamad; Yap, Seong Ling; Chang, Edward Yi.

In: Applied Physics Express, Vol. 9, No. 2, 021203, 01.02.2016.

Research output: Contribution to journalArticle

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AU - Dee, Chang Fu

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