Reduced graphene oxide preparation and its applications in solution-processed write-once-read-many-times graphene-based memory device

Poh Choon Ooi, Muhammad Aniq Shazni Mohammad Haniff, Mohd Farhanulhakim Mohd Razip Wee, Chang Fu Dee, Boon Tong Goh, Mohd Ambri Mohamed, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We fabricated graphene-based non-volatile memory device by solution-processed route in this work. Thermally reduced graphene oxide (rGO) on quartz substrate prepared in the ambient of acetylene/hydrogen plasma treatment was used as bottom conductive electrode to replace the commonly-used bottom conductive indium-tin-oxide layer. The morphology of the rGO film was characterized and used for device fabrication. The device was fabricated in the simple structure of silver nanowires/nanocomposite/rGO/quartz and the nanocomposite was prepared by mixing the graphene quantum dots and graphene oxide in ethanol. Current-voltage (I–V) measurement of the fabricated device shows current bistablity with the similar behavior as write-once-read-many-times (WORM) memory device. The ON/OFF ratio of the current bistability for the devices was as large as 1 × 103 with retention stability up to 1 × 104 s. The direct tunnelling, trapped-charge limited-current, and Ohmic conduction were proposed as dominant conduction mechanisms through the fabricated NVM devices based on the obtained I–V characteristics.

Original languageEnglish
Pages (from-to)547-554
Number of pages8
JournalCarbon
Volume124
DOIs
Publication statusPublished - 1 Nov 2017

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Oxides
Graphene
Data storage equipment
Quartz
Nanocomposites
Acetylene
Tin oxides
Silver
Indium
Semiconductor quantum dots
Oxide films
Nanowires
Hydrogen
Ethanol
Plasmas
Fabrication
Electrodes
Electric potential
Substrates

Keywords

  • Conduction mechanisms
  • Graphene
  • Graphene oxide
  • Graphene quantum dots
  • Graphene-based
  • Non-volatile memory
  • Reduced graphene oxide

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Reduced graphene oxide preparation and its applications in solution-processed write-once-read-many-times graphene-based memory device. / Ooi, Poh Choon; Haniff, Muhammad Aniq Shazni Mohammad; Mohd Razip Wee, Mohd Farhanulhakim; Dee, Chang Fu; Goh, Boon Tong; Mohamed, Mohd Ambri; Yeop Majlis, Burhanuddin.

In: Carbon, Vol. 124, 01.11.2017, p. 547-554.

Research output: Contribution to journalArticle

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AU - Mohd Razip Wee, Mohd Farhanulhakim

AU - Dee, Chang Fu

AU - Goh, Boon Tong

AU - Mohamed, Mohd Ambri

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