Recovery behavior of high purity cubic SiC polycrystals by post-irradiation annealing up to 1673 K after low temperature neutron irradiation

Mohd Idzat Idris, Saishun Yamazaki, Katsumi Yoshida, Toyohiko Yano

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Two kinds of high purity cubic (β) SiC polycrystals, PureBeta-SiC and CVD-SiC, were irradiated in the BR2 reactor (Belgium) up to a fluence of 2.0-2.5 × 1024 (E > 0.1 MeV) at 333-363 K. Changes in macroscopic lengths were examined by post-irradiation thermal annealing using a precision dilatometer up to 1673 K with a step-heating method. The specimen was held at each temperature step for 6 h and the change in length of the specimen was recorded during each isothermal annealing step from 373 K to 1673 K with 50 K increments. The recovery curves were analyzed with the first order model, and rate constants at each annealing step were obtained. Recovery of defects, induced by neutron irradiation in high purity β-SiC, has four stages of different activation energies. At 373-573 K, the activation energy of PureBeta-SiC and CVD-SiC was in the range of 0.17-0.24 eV and 0.12-0.14 eV; 0.002-0.04 eV and 0.006-0.04 eV at 723-923 K; 0.20-0.27 eV and 0.26-0.31 eV at 923-1223 K; and 1.37-1.38 eV and 1.26-1.29 eV at 1323-1523 K, respectively. Below ∼1223 K the recombination occurred possibly for closely positioned C and Si Frenkel pairs, and no long range migration is deemed essential. Nearly three-fourths of recovery, induced by neutron irradiation, occur by this mechanism. In addition, at 1323-1523 K, recombination of slightly separated C Frenkel pairs and more long-range migration of Si interstitials may have occurred for PureBeta-SiC and CVD-SiC specimens. Migration of both vacancies may be restricted up to ∼1523 K. Comparing to hexagonal α-SiC, high purity β-SiC recovered more quickly in the lower annealing temperature range of less than 873 K, in particular less than 573 K.

Original languageEnglish
Pages (from-to)814-819
Number of pages6
JournalJournal of Nuclear Materials
Volume465
DOIs
Publication statusPublished - 1 Oct 2015

Fingerprint

Neutron irradiation
Polycrystals
neutron irradiation
polycrystals
Chemical vapor deposition
purity
recovery
Irradiation
Annealing
Recovery
irradiation
annealing
vapor deposition
Activation energy
Isothermal annealing
Dilatometers
activation energy
Belgium
Temperature
extensometers

Keywords

  • Activation energy
  • Neutron irradiation
  • Recovery behavior
  • Silicon carbide

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Cite this

Recovery behavior of high purity cubic SiC polycrystals by post-irradiation annealing up to 1673 K after low temperature neutron irradiation. / Idris, Mohd Idzat; Yamazaki, Saishun; Yoshida, Katsumi; Yano, Toyohiko.

In: Journal of Nuclear Materials, Vol. 465, 01.10.2015, p. 814-819.

Research output: Contribution to journalArticle

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N2 - Two kinds of high purity cubic (β) SiC polycrystals, PureBeta-SiC and CVD-SiC, were irradiated in the BR2 reactor (Belgium) up to a fluence of 2.0-2.5 × 1024 (E > 0.1 MeV) at 333-363 K. Changes in macroscopic lengths were examined by post-irradiation thermal annealing using a precision dilatometer up to 1673 K with a step-heating method. The specimen was held at each temperature step for 6 h and the change in length of the specimen was recorded during each isothermal annealing step from 373 K to 1673 K with 50 K increments. The recovery curves were analyzed with the first order model, and rate constants at each annealing step were obtained. Recovery of defects, induced by neutron irradiation in high purity β-SiC, has four stages of different activation energies. At 373-573 K, the activation energy of PureBeta-SiC and CVD-SiC was in the range of 0.17-0.24 eV and 0.12-0.14 eV; 0.002-0.04 eV and 0.006-0.04 eV at 723-923 K; 0.20-0.27 eV and 0.26-0.31 eV at 923-1223 K; and 1.37-1.38 eV and 1.26-1.29 eV at 1323-1523 K, respectively. Below ∼1223 K the recombination occurred possibly for closely positioned C and Si Frenkel pairs, and no long range migration is deemed essential. Nearly three-fourths of recovery, induced by neutron irradiation, occur by this mechanism. In addition, at 1323-1523 K, recombination of slightly separated C Frenkel pairs and more long-range migration of Si interstitials may have occurred for PureBeta-SiC and CVD-SiC specimens. Migration of both vacancies may be restricted up to ∼1523 K. Comparing to hexagonal α-SiC, high purity β-SiC recovered more quickly in the lower annealing temperature range of less than 873 K, in particular less than 573 K.

AB - Two kinds of high purity cubic (β) SiC polycrystals, PureBeta-SiC and CVD-SiC, were irradiated in the BR2 reactor (Belgium) up to a fluence of 2.0-2.5 × 1024 (E > 0.1 MeV) at 333-363 K. Changes in macroscopic lengths were examined by post-irradiation thermal annealing using a precision dilatometer up to 1673 K with a step-heating method. The specimen was held at each temperature step for 6 h and the change in length of the specimen was recorded during each isothermal annealing step from 373 K to 1673 K with 50 K increments. The recovery curves were analyzed with the first order model, and rate constants at each annealing step were obtained. Recovery of defects, induced by neutron irradiation in high purity β-SiC, has four stages of different activation energies. At 373-573 K, the activation energy of PureBeta-SiC and CVD-SiC was in the range of 0.17-0.24 eV and 0.12-0.14 eV; 0.002-0.04 eV and 0.006-0.04 eV at 723-923 K; 0.20-0.27 eV and 0.26-0.31 eV at 923-1223 K; and 1.37-1.38 eV and 1.26-1.29 eV at 1323-1523 K, respectively. Below ∼1223 K the recombination occurred possibly for closely positioned C and Si Frenkel pairs, and no long range migration is deemed essential. Nearly three-fourths of recovery, induced by neutron irradiation, occur by this mechanism. In addition, at 1323-1523 K, recombination of slightly separated C Frenkel pairs and more long-range migration of Si interstitials may have occurred for PureBeta-SiC and CVD-SiC specimens. Migration of both vacancies may be restricted up to ∼1523 K. Comparing to hexagonal α-SiC, high purity β-SiC recovered more quickly in the lower annealing temperature range of less than 873 K, in particular less than 573 K.

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