Realization of perfect silicon corrugated diaphragm using KOH etching

Norhayati Soin, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This article presents corner compensation mask design in order to realise perfect silicon corrugated diaphragm using KOM etching technique, The corner undercutting of silicon (100) in KOH is quite serious and without compensation it is difficult to construct a complete convex corner structures since the silicon diaphragm is etched from both top and bottom directions its order to form the corrugated structure. The introduction of the additional mask layout for the protection of convex comers at all convex-mask geometry of the corrupted diaphragm daring the KOH etching process has been proved by simulation to produce almost perfect square corners

Original languageEnglish
Title of host publicationProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Pages400-406
Number of pages7
Publication statusPublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur
Duration: 4 Dec 20049 Dec 2004

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CityKuala Lumpur
Period4/12/049/12/04

Fingerprint

Diaphragms
Masks
Etching
Silicon
Geometry
Compensation and Redress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Soin, N., & Yeop Majlis, B. (2004). Realization of perfect silicon corrugated diaphragm using KOH etching. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics (pp. 400-406). [1620913]

Realization of perfect silicon corrugated diaphragm using KOH etching. / Soin, Norhayati; Yeop Majlis, Burhanuddin.

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 400-406 1620913.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Soin, N & Yeop Majlis, B 2004, Realization of perfect silicon corrugated diaphragm using KOH etching. in Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics., 1620913, pp. 400-406, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, 4/12/04.
Soin N, Yeop Majlis B. Realization of perfect silicon corrugated diaphragm using KOH etching. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 400-406. 1620913
Soin, Norhayati ; Yeop Majlis, Burhanuddin. / Realization of perfect silicon corrugated diaphragm using KOH etching. Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. pp. 400-406
@inproceedings{49fa857d05944d389fdc6e8eabb35f2d,
title = "Realization of perfect silicon corrugated diaphragm using KOH etching",
abstract = "This article presents corner compensation mask design in order to realise perfect silicon corrugated diaphragm using KOM etching technique, The corner undercutting of silicon (100) in KOH is quite serious and without compensation it is difficult to construct a complete convex corner structures since the silicon diaphragm is etched from both top and bottom directions its order to form the corrugated structure. The introduction of the additional mask layout for the protection of convex comers at all convex-mask geometry of the corrupted diaphragm daring the KOH etching process has been proved by simulation to produce almost perfect square corners",
author = "Norhayati Soin and {Yeop Majlis}, Burhanuddin",
year = "2004",
language = "English",
isbn = "0780386582",
pages = "400--406",
booktitle = "Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics",

}

TY - GEN

T1 - Realization of perfect silicon corrugated diaphragm using KOH etching

AU - Soin, Norhayati

AU - Yeop Majlis, Burhanuddin

PY - 2004

Y1 - 2004

N2 - This article presents corner compensation mask design in order to realise perfect silicon corrugated diaphragm using KOM etching technique, The corner undercutting of silicon (100) in KOH is quite serious and without compensation it is difficult to construct a complete convex corner structures since the silicon diaphragm is etched from both top and bottom directions its order to form the corrugated structure. The introduction of the additional mask layout for the protection of convex comers at all convex-mask geometry of the corrupted diaphragm daring the KOH etching process has been proved by simulation to produce almost perfect square corners

AB - This article presents corner compensation mask design in order to realise perfect silicon corrugated diaphragm using KOM etching technique, The corner undercutting of silicon (100) in KOH is quite serious and without compensation it is difficult to construct a complete convex corner structures since the silicon diaphragm is etched from both top and bottom directions its order to form the corrugated structure. The introduction of the additional mask layout for the protection of convex comers at all convex-mask geometry of the corrupted diaphragm daring the KOH etching process has been proved by simulation to produce almost perfect square corners

UR - http://www.scopus.com/inward/record.url?scp=51349148891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51349148891&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:51349148891

SN - 0780386582

SN - 9780780386587

SP - 400

EP - 406

BT - Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

ER -