Raman and photoluminescence characterization of mesoscopic Si grating structures

An Shyang Chu, Saleem H. Zaidi, Bernardo Martinez-Tovar, Kenneth Jungling, S. R J Brueck

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent observations of efficient, visible room-temperature photoluminescence (PL) in porous Si has stimulated an intense debate regarding its physical origin. Various investigators have attributed this PL to quantum-size effects, to surface chemistry, or to a combination. The random heterogeneous structure of porous Si complicates experimental analysis. Here, we report on Raman and PL measurements of (110) Si grating structures with linewidths in the 5-50-nm range. We have developed a simple, inexpensive, scalable interferometric and dry-oxidation technique for fabrication of large area arrays of mesoscopic-scale Si structures. Raman scattering has been used extensively to characterize Si microstructures; much of this work has been in characterizing the transition between amorphous and crystalline Si. We have applied Raman scattering to characterize high aspect ratio, nanometer-scale Si grating structures. We report details of these optical studies.

Original languageEnglish
Title of host publicationProceedings of the International Quantum Electronics Conference (IQEC'94)
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages134-135
Number of pages2
ISBN (Print)0780319737
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA
Duration: 8 May 199413 May 1994

Other

OtherProceedings of the 21st International Quantum Electronics Conference (IQEC'94)
CityAnaheim, CA, USA
Period8/5/9413/5/94

Fingerprint

Photoluminescence
Raman scattering
Surface chemistry
Linewidth
Aspect ratio
Crystalline materials
Fabrication
Oxidation
Microstructure
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chu, A. S., Zaidi, S. H., Martinez-Tovar, B., Jungling, K., & Brueck, S. R. J. (1994). Raman and photoluminescence characterization of mesoscopic Si grating structures. In Proceedings of the International Quantum Electronics Conference (IQEC'94) (pp. 134-135). Piscataway, NJ, United States: Publ by IEEE.

Raman and photoluminescence characterization of mesoscopic Si grating structures. / Chu, An Shyang; Zaidi, Saleem H.; Martinez-Tovar, Bernardo; Jungling, Kenneth; Brueck, S. R J.

Proceedings of the International Quantum Electronics Conference (IQEC'94). Piscataway, NJ, United States : Publ by IEEE, 1994. p. 134-135.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chu, AS, Zaidi, SH, Martinez-Tovar, B, Jungling, K & Brueck, SRJ 1994, Raman and photoluminescence characterization of mesoscopic Si grating structures. in Proceedings of the International Quantum Electronics Conference (IQEC'94). Publ by IEEE, Piscataway, NJ, United States, pp. 134-135, Proceedings of the 21st International Quantum Electronics Conference (IQEC'94), Anaheim, CA, USA, 8/5/94.
Chu AS, Zaidi SH, Martinez-Tovar B, Jungling K, Brueck SRJ. Raman and photoluminescence characterization of mesoscopic Si grating structures. In Proceedings of the International Quantum Electronics Conference (IQEC'94). Piscataway, NJ, United States: Publ by IEEE. 1994. p. 134-135
Chu, An Shyang ; Zaidi, Saleem H. ; Martinez-Tovar, Bernardo ; Jungling, Kenneth ; Brueck, S. R J. / Raman and photoluminescence characterization of mesoscopic Si grating structures. Proceedings of the International Quantum Electronics Conference (IQEC'94). Piscataway, NJ, United States : Publ by IEEE, 1994. pp. 134-135
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