Abstract
Recent observations of efficient, visible room-temperature photoluminescence (PL) in porous Si has stimulated an intense debate regarding its physical origin. Various investigators have attributed this PL to quantum-size effects, to surface chemistry, or to a combination. The random heterogeneous structure of porous Si complicates experimental analysis. Here, we report on Raman and PL measurements of (110) Si grating structures with linewidths in the 5-50-nm range. We have developed a simple, inexpensive, scalable interferometric and dry-oxidation technique for fabrication of large area arrays of mesoscopic-scale Si structures. Raman scattering has been used extensively to characterize Si microstructures; much of this work has been in characterizing the transition between amorphous and crystalline Si. We have applied Raman scattering to characterize high aspect ratio, nanometer-scale Si grating structures. We report details of these optical studies.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the International Quantum Electronics Conference (IQEC'94) |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | Publ by IEEE |
| Pages | 134-135 |
| Number of pages | 2 |
| ISBN (Print) | 0780319737 |
| Publication status | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA Duration: 8 May 1994 → 13 May 1994 |
Other
| Other | Proceedings of the 21st International Quantum Electronics Conference (IQEC'94) |
|---|---|
| City | Anaheim, CA, USA |
| Period | 8/5/94 → 13/5/94 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Raman and photoluminescence characterization of mesoscopic Si grating structures. / Chu, An Shyang; Zaidi, Saleem H.; Martinez-Tovar, Bernardo; Jungling, Kenneth; Brueck, S. R J.
Proceedings of the International Quantum Electronics Conference (IQEC'94). Piscataway, NJ, United States : Publ by IEEE, 1994. p. 134-135.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Raman and photoluminescence characterization of mesoscopic Si grating structures
AU - Chu, An Shyang
AU - Zaidi, Saleem H.
AU - Martinez-Tovar, Bernardo
AU - Jungling, Kenneth
AU - Brueck, S. R J
PY - 1994
Y1 - 1994
N2 - Recent observations of efficient, visible room-temperature photoluminescence (PL) in porous Si has stimulated an intense debate regarding its physical origin. Various investigators have attributed this PL to quantum-size effects, to surface chemistry, or to a combination. The random heterogeneous structure of porous Si complicates experimental analysis. Here, we report on Raman and PL measurements of (110) Si grating structures with linewidths in the 5-50-nm range. We have developed a simple, inexpensive, scalable interferometric and dry-oxidation technique for fabrication of large area arrays of mesoscopic-scale Si structures. Raman scattering has been used extensively to characterize Si microstructures; much of this work has been in characterizing the transition between amorphous and crystalline Si. We have applied Raman scattering to characterize high aspect ratio, nanometer-scale Si grating structures. We report details of these optical studies.
AB - Recent observations of efficient, visible room-temperature photoluminescence (PL) in porous Si has stimulated an intense debate regarding its physical origin. Various investigators have attributed this PL to quantum-size effects, to surface chemistry, or to a combination. The random heterogeneous structure of porous Si complicates experimental analysis. Here, we report on Raman and PL measurements of (110) Si grating structures with linewidths in the 5-50-nm range. We have developed a simple, inexpensive, scalable interferometric and dry-oxidation technique for fabrication of large area arrays of mesoscopic-scale Si structures. Raman scattering has been used extensively to characterize Si microstructures; much of this work has been in characterizing the transition between amorphous and crystalline Si. We have applied Raman scattering to characterize high aspect ratio, nanometer-scale Si grating structures. We report details of these optical studies.
UR - http://www.scopus.com/inward/record.url?scp=0028594219&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028594219&partnerID=8YFLogxK
M3 - Conference contribution
SN - 0780319737
SP - 134
EP - 135
BT - Proceedings of the International Quantum Electronics Conference (IQEC'94)
PB - Publ by IEEE
CY - Piscataway, NJ, United States
ER -