Interaksi denyutan laser dengan nano-struktur silikon dalam pembentukan pemancar

Translated title of the contribution: Pulsed laser interactions with silicon nanostructures in emitter formation

Victor Lim Chee Huat, Cheow Siu Leong, Kamaruzzaman Sopian, Saleem H. Zaidi

Research output: Contribution to journalArticle

Abstract

Silicon wafer thinning is now approaching fundamental limits for wafer thickness owing to thermal expansion mismatch between Al and Si, reduced yields in wet-chemical processing as a result of fragility, and reduced optical absorption. An alternate manufacturing approach is needed to eliminate current manufacturing issues. In recent years, pulsed lasers have become readily available and costs have been significantly reduced. Pulsed laser interactions with silicon, in terms of micromachining, diffusions, and edge isolation, are well known, and have become industrial manufacturing tools. In this paper, pulsed laser interactions with silicon nanostructures were identified as the most desirable solution for the fundamental limitations discussed above. Silicon nanostructures have the capability for extremely high absorption that significantly reduces requirements for laser power, as well as thermal shock to the thinner wafer. Laser-assisted crystallization, in the presence of doping materials, leads to nanostructure profiles that are highly desirable for sunlight absorption. The objective of this paper is the replacement of high-temperature POCl3 diffusion by laser-assisted phosphorus layers. With these improvements, complete low-temperature processing of thinner wafers was achievable with 3.7 % efficiency. Two-dimensional laser scanning was proved to be able to form uniformly annealed surfaces with higher fill factor and open-circuit voltage.

Original languageMalay
Pages (from-to)1274-1283
Number of pages10
JournalMalaysian Journal of Analytical Sciences
Volume19
Issue number6
Publication statusPublished - 2015

Fingerprint

Silicon
Pulsed lasers
Nanostructures
Lasers
Micromachining
Thermal shock
Open circuit voltage
Processing
Crystallization
Silicon wafers
Phosphorus
Light absorption
Thermal expansion
Doping (additives)
Scanning
Temperature
Costs

ASJC Scopus subject areas

  • Analytical Chemistry

Cite this

Interaksi denyutan laser dengan nano-struktur silikon dalam pembentukan pemancar. / Huat, Victor Lim Chee; Leong, Cheow Siu; Sopian, Kamaruzzaman; Zaidi, Saleem H.

In: Malaysian Journal of Analytical Sciences, Vol. 19, No. 6, 2015, p. 1274-1283.

Research output: Contribution to journalArticle

@article{eafbba60da734f33aa609da813f4aeba,
title = "Interaksi denyutan laser dengan nano-struktur silikon dalam pembentukan pemancar",
abstract = "Silicon wafer thinning is now approaching fundamental limits for wafer thickness owing to thermal expansion mismatch between Al and Si, reduced yields in wet-chemical processing as a result of fragility, and reduced optical absorption. An alternate manufacturing approach is needed to eliminate current manufacturing issues. In recent years, pulsed lasers have become readily available and costs have been significantly reduced. Pulsed laser interactions with silicon, in terms of micromachining, diffusions, and edge isolation, are well known, and have become industrial manufacturing tools. In this paper, pulsed laser interactions with silicon nanostructures were identified as the most desirable solution for the fundamental limitations discussed above. Silicon nanostructures have the capability for extremely high absorption that significantly reduces requirements for laser power, as well as thermal shock to the thinner wafer. Laser-assisted crystallization, in the presence of doping materials, leads to nanostructure profiles that are highly desirable for sunlight absorption. The objective of this paper is the replacement of high-temperature POCl3 diffusion by laser-assisted phosphorus layers. With these improvements, complete low-temperature processing of thinner wafers was achievable with 3.7 {\%} efficiency. Two-dimensional laser scanning was proved to be able to form uniformly annealed surfaces with higher fill factor and open-circuit voltage.",
keywords = "Laser-assisted crystallization, Pulsed laser interactions, Silicon nanostructures",
author = "Huat, {Victor Lim Chee} and Leong, {Cheow Siu} and Kamaruzzaman Sopian and Zaidi, {Saleem H.}",
year = "2015",
language = "Malay",
volume = "19",
pages = "1274--1283",
journal = "Malaysian Journal of Analytical Sciences",
issn = "1394-2506",
publisher = "Faculty of Science and Technology, Universiti Kebangsaan Malaysia",
number = "6",

}

TY - JOUR

T1 - Interaksi denyutan laser dengan nano-struktur silikon dalam pembentukan pemancar

AU - Huat, Victor Lim Chee

AU - Leong, Cheow Siu

AU - Sopian, Kamaruzzaman

AU - Zaidi, Saleem H.

PY - 2015

Y1 - 2015

N2 - Silicon wafer thinning is now approaching fundamental limits for wafer thickness owing to thermal expansion mismatch between Al and Si, reduced yields in wet-chemical processing as a result of fragility, and reduced optical absorption. An alternate manufacturing approach is needed to eliminate current manufacturing issues. In recent years, pulsed lasers have become readily available and costs have been significantly reduced. Pulsed laser interactions with silicon, in terms of micromachining, diffusions, and edge isolation, are well known, and have become industrial manufacturing tools. In this paper, pulsed laser interactions with silicon nanostructures were identified as the most desirable solution for the fundamental limitations discussed above. Silicon nanostructures have the capability for extremely high absorption that significantly reduces requirements for laser power, as well as thermal shock to the thinner wafer. Laser-assisted crystallization, in the presence of doping materials, leads to nanostructure profiles that are highly desirable for sunlight absorption. The objective of this paper is the replacement of high-temperature POCl3 diffusion by laser-assisted phosphorus layers. With these improvements, complete low-temperature processing of thinner wafers was achievable with 3.7 % efficiency. Two-dimensional laser scanning was proved to be able to form uniformly annealed surfaces with higher fill factor and open-circuit voltage.

AB - Silicon wafer thinning is now approaching fundamental limits for wafer thickness owing to thermal expansion mismatch between Al and Si, reduced yields in wet-chemical processing as a result of fragility, and reduced optical absorption. An alternate manufacturing approach is needed to eliminate current manufacturing issues. In recent years, pulsed lasers have become readily available and costs have been significantly reduced. Pulsed laser interactions with silicon, in terms of micromachining, diffusions, and edge isolation, are well known, and have become industrial manufacturing tools. In this paper, pulsed laser interactions with silicon nanostructures were identified as the most desirable solution for the fundamental limitations discussed above. Silicon nanostructures have the capability for extremely high absorption that significantly reduces requirements for laser power, as well as thermal shock to the thinner wafer. Laser-assisted crystallization, in the presence of doping materials, leads to nanostructure profiles that are highly desirable for sunlight absorption. The objective of this paper is the replacement of high-temperature POCl3 diffusion by laser-assisted phosphorus layers. With these improvements, complete low-temperature processing of thinner wafers was achievable with 3.7 % efficiency. Two-dimensional laser scanning was proved to be able to form uniformly annealed surfaces with higher fill factor and open-circuit voltage.

KW - Laser-assisted crystallization

KW - Pulsed laser interactions

KW - Silicon nanostructures

UR - http://www.scopus.com/inward/record.url?scp=84949814043&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949814043&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84949814043

VL - 19

SP - 1274

EP - 1283

JO - Malaysian Journal of Analytical Sciences

JF - Malaysian Journal of Analytical Sciences

SN - 1394-2506

IS - 6

ER -