Pulse power failure model of power MOSFET due to electrical overstress using tasca method

Nur Syakimah Ismail, Ibrahim Ahmad, Hafizah Husain, Shirley Chuah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The objective of this research is to study electrical overstress (EOS) defect at gate oxide for various pulse widths in n-channel Power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Moreover, this research also intent to develop power failure model for n-channel power MOSFET according to Tasca method. Electrical overstress does not have EOS standards and quantitative EOS design objectives to tackle this problem. Square pulse testing is used in this research due to easy to generate and simple to analyze. Time-to-failure (tf) is taken for power profiles modeling by observing abrupt drop in voltage waveform seen on oscilloscope. Tasca derived the thermal model by regarded the defect area as a sphere immersed in an infinite medium at ambient temperature. Result from failure analysis on all failed units had shown that hot spot formations begin at gate runner of the die and pulse stress given on VGS has cause gate oxide breakdown. Pulse power failure model for device n-channel power MOSFET can be obtained using Tasca method.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages1006-1009
Number of pages4
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

MOSFET devices
Defects
Oxides
Failure analysis
Testing
Electric potential
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ismail, N. S., Ahmad, I., Husain, H., & Chuah, S. (2006). Pulse power failure model of power MOSFET due to electrical overstress using tasca method. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 1006-1009). [4266773] https://doi.org/10.1109/SMELEC.2006.380790

Pulse power failure model of power MOSFET due to electrical overstress using tasca method. / Ismail, Nur Syakimah; Ahmad, Ibrahim; Husain, Hafizah; Chuah, Shirley.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 1006-1009 4266773.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ismail, NS, Ahmad, I, Husain, H & Chuah, S 2006, Pulse power failure model of power MOSFET due to electrical overstress using tasca method. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266773, pp. 1006-1009, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.380790
Ismail NS, Ahmad I, Husain H, Chuah S. Pulse power failure model of power MOSFET due to electrical overstress using tasca method. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 1006-1009. 4266773 https://doi.org/10.1109/SMELEC.2006.380790
Ismail, Nur Syakimah ; Ahmad, Ibrahim ; Husain, Hafizah ; Chuah, Shirley. / Pulse power failure model of power MOSFET due to electrical overstress using tasca method. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 1006-1009
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