Prospects of Cu2ZnSnS4 (CZTS) solar cells from numerical analysis

Nowshad Amin, Mohammad Istiaque Hossain, Puvaneswaran Chelvanathan, A. S M Mukter Uzzaman, Kamaruzzaman Sopian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

In the rapid growth of thin film solar cells, Cu2ZnSnS 4 (CZTS) poses to be a potential and alternative absorber layer of CIGS based cells. Besides solving the scarcity issue of rare materials like In or Ga in CIGS based solar cells, the CZTS based cells do not contain any toxic material and can lead to produce nontoxic thin film solar cells with excellent optical properties. In this work, absorber layer parameters have been studied by Solar Cell Capacitance Simulator (SCAPS) in terms of CZTS layer thickness and band gap to find out the optimum electrical performance. A promising result has been achieved with an efficiency of 7.55 % (with Voc = 0.5136 V, Jsc = 30.83 mA/cm2 and fill factor = 47.65 %) by using CZTS/CdS structure. It has also been found that the high efficiency of CZTS absorber layer thickness lies between 1 and 2.2 μm. This result can be explained in the practical work as non-stoichiometric composition of CZTS may result in lower efficiency of the solar cells. Quantum efficiency is almost 80% in the region of 350-500 nm, due to less absorption of light in the buffer layer. In addition, it is revealed that the highest efficiency cell can be achieved with the In2S3 buffer layer band gap of 2.74-2.90 eV. The study suggests that the proposed solar cell can be widely exploited in response to the fabrication of high efficiency thin film photovoltaic devices.

Original languageEnglish
Title of host publicationICECE 2010 - 6th International Conference on Electrical and Computer Engineering
Pages730-733
Number of pages4
DOIs
Publication statusPublished - 2010
Event6th International Conference on Electrical and Computer Engineering, ICECE 2010 - Dhaka
Duration: 18 Dec 201020 Dec 2010

Other

Other6th International Conference on Electrical and Computer Engineering, ICECE 2010
CityDhaka
Period18/12/1020/12/10

Fingerprint

Numerical analysis
Solar cells
Buffer layers
Energy gap
Toxic materials
Quantum efficiency
Capacitance
Optical properties
Simulators
Fabrication
Thin films
Chemical analysis
Thin film solar cells

Keywords

  • CZTS absorber layer
  • Electrical performance
  • InS buffer layer
  • SCAPS
  • Thin film solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Amin, N., Hossain, M. I., Chelvanathan, P., Uzzaman, A. S. M. M., & Sopian, K. (2010). Prospects of Cu2ZnSnS4 (CZTS) solar cells from numerical analysis. In ICECE 2010 - 6th International Conference on Electrical and Computer Engineering (pp. 730-733). [5700796] https://doi.org/10.1109/ICELCE.2010.5700796

Prospects of Cu2ZnSnS4 (CZTS) solar cells from numerical analysis. / Amin, Nowshad; Hossain, Mohammad Istiaque; Chelvanathan, Puvaneswaran; Uzzaman, A. S M Mukter; Sopian, Kamaruzzaman.

ICECE 2010 - 6th International Conference on Electrical and Computer Engineering. 2010. p. 730-733 5700796.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Amin, N, Hossain, MI, Chelvanathan, P, Uzzaman, ASMM & Sopian, K 2010, Prospects of Cu2ZnSnS4 (CZTS) solar cells from numerical analysis. in ICECE 2010 - 6th International Conference on Electrical and Computer Engineering., 5700796, pp. 730-733, 6th International Conference on Electrical and Computer Engineering, ICECE 2010, Dhaka, 18/12/10. https://doi.org/10.1109/ICELCE.2010.5700796
Amin N, Hossain MI, Chelvanathan P, Uzzaman ASMM, Sopian K. Prospects of Cu2ZnSnS4 (CZTS) solar cells from numerical analysis. In ICECE 2010 - 6th International Conference on Electrical and Computer Engineering. 2010. p. 730-733. 5700796 https://doi.org/10.1109/ICELCE.2010.5700796
Amin, Nowshad ; Hossain, Mohammad Istiaque ; Chelvanathan, Puvaneswaran ; Uzzaman, A. S M Mukter ; Sopian, Kamaruzzaman. / Prospects of Cu2ZnSnS4 (CZTS) solar cells from numerical analysis. ICECE 2010 - 6th International Conference on Electrical and Computer Engineering. 2010. pp. 730-733
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