Prospective development in diffusion barrier layers for copper metallization in LSI

H. Y. Wong, N. F. Mohd Shukor, Nowshad Amin

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion in barrier layer materials, and promising candidate barrier layers for copper metallization in LSIs. The applicability of different materials as diffusion barriers in copper-based interconnects has also been assessed for practical usage.

Original languageEnglish
Pages (from-to)777-782
Number of pages6
JournalMicroelectronics Journal
Volume38
Issue number6-7
DOIs
Publication statusPublished - Jun 2007

Fingerprint

large scale integration
Diffusion barriers
barrier layers
Metallizing
Copper
copper
trends

Keywords

  • Barrier layers materials
  • Copper interconnection

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Prospective development in diffusion barrier layers for copper metallization in LSI. / Wong, H. Y.; Mohd Shukor, N. F.; Amin, Nowshad.

In: Microelectronics Journal, Vol. 38, No. 6-7, 06.2007, p. 777-782.

Research output: Contribution to journalArticle

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