Prospect of back contact for A highly efficient InGaN thin film solar cell from numerical analysis

Nargis Akter, Md Salim Miah, M. A. Matin, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nowadays, solar photovoltaic (PV) is the most attractive and sustainable technology to solve the present power crisis. Indium Gallium Nitride (InGaN) is an amazing photovoltaic material that has tunable bandgap ranging from 0.7 eV-3.4 eV that can cover the total solar spectrum to increase the efficiency abundantly. Recently, InGaN alloy is exhibiting its potential for various optoelectronic and power electronic applications. Such excellent semiconductor alloy from group III-V is motivating enormous research interest to build highly efficient photovoltaic cell. This paper works on the prospect of back contact materials by the performance of InGaN solar cells. The rigorous simulation was conducted with several ratios of In in InGaN with different thickness of P and N layer of the single junction solar cell. Different cell structures were examined through AMPS-1D simulator to discover the stable and efficient InGaN cell. Nine different cell structures were investigated to find the stable and efficient InGaN cell where Ti, Mo, Cu, Ni, Pt, Au, Co, Al, Ag, etc. were used as back contact materials and found a high conversion efficiency of 25.06%. Stability of the cell structure was also investigated that is-0.04/C shows the high stability.

Original languageEnglish
Title of host publication1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages622-625
Number of pages4
ISBN (Electronic)9781538680124
DOIs
Publication statusPublished - 19 Feb 2019
Event1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019 - Dhaka, Bangladesh
Duration: 10 Jan 201912 Jan 2019

Publication series

Name1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019

Conference

Conference1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019
CountryBangladesh
CityDhaka
Period10/1/1912/1/19

Fingerprint

Gallium nitride
Indium
Numerical analysis
Solar cells
Photovoltaic cells
Power electronics
Optoelectronic devices
Conversion efficiency
Thin film solar cells
Energy gap
Simulators
Semiconductor materials

Keywords

  • APMS 1D
  • Conversion efficiency
  • InGaN
  • Photovoltaic cell
  • Renewable energy
  • Solar energy

ASJC Scopus subject areas

  • Signal Processing
  • Software
  • Computer Science Applications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Akter, N., Miah, M. S., Matin, M. A., & Amin, N. (2019). Prospect of back contact for A highly efficient InGaN thin film solar cell from numerical analysis. In 1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019 (pp. 622-625). [8644303] (1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICREST.2019.8644303

Prospect of back contact for A highly efficient InGaN thin film solar cell from numerical analysis. / Akter, Nargis; Miah, Md Salim; Matin, M. A.; Amin, Nowshad.

1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 622-625 8644303 (1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akter, N, Miah, MS, Matin, MA & Amin, N 2019, Prospect of back contact for A highly efficient InGaN thin film solar cell from numerical analysis. in 1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019., 8644303, 1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019, Institute of Electrical and Electronics Engineers Inc., pp. 622-625, 1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019, Dhaka, Bangladesh, 10/1/19. https://doi.org/10.1109/ICREST.2019.8644303
Akter N, Miah MS, Matin MA, Amin N. Prospect of back contact for A highly efficient InGaN thin film solar cell from numerical analysis. In 1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 622-625. 8644303. (1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019). https://doi.org/10.1109/ICREST.2019.8644303
Akter, Nargis ; Miah, Md Salim ; Matin, M. A. ; Amin, Nowshad. / Prospect of back contact for A highly efficient InGaN thin film solar cell from numerical analysis. 1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 622-625 (1st International Conference on Robotics, Electrical and Signal Processing Techniques, ICREST 2019).
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