Properties of low temperature vacuum annealed CZTS thin films deposited on polymer substrate

M. A. Islam, K. S. Rahman, F. Haque, Md. Akhtaruzzaman, M. M. Alam, Z. A. Alothman, Kamaruzzaman Sopian, Nowshad Amin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Structural, compositional, morphological and electrical characterizations of the vacuum annealed Cu2ZnSnS4 (CZTS) thin films were carried out in this study. The films were annealed at the low temperature (200 °C) for a long time (1- 3 hours) without excessive sulphur ambient to investigate the possibility of (i) low temperature process and (ii) eluding the post deposition sulphurization process, respectively. The change in the microstructure with subsequent recrystallization and grain growth was observed in annealed thin films. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different for the different films as observed from XRD analysis. The films are found in Zn poor and Cu rich and the ratio of Cu/(Zn+Sn) show that the films are very poor stoichiometric. The lowest resistivity 30.6ω-cm with mobility 6.8 cm2/V-sec and highest resistivity 97.2ω-cm with mobility 5.4 cm2/V-sec was observed for as-deposited and annealed CZTS thin films, respectively.

Original languageEnglish
Pages (from-to)233-239
Number of pages7
JournalChalcogenide Letters
Volume11
Issue number5
Publication statusPublished - 2014

Fingerprint

Polymers
Vacuum
Thin films
vacuum
polymers
Substrates
thin films
Temperature
electrical resistivity
Grain growth
Sulfur
Lattice constants
sulfur
grain size
microstructure
Microstructure

Keywords

  • Curich
  • CZTS thin films
  • Polymer substrate
  • Vacuum annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Physics and Astronomy(all)

Cite this

Islam, M. A., Rahman, K. S., Haque, F., Akhtaruzzaman, M., Alam, M. M., Alothman, Z. A., ... Amin, N. (2014). Properties of low temperature vacuum annealed CZTS thin films deposited on polymer substrate. Chalcogenide Letters, 11(5), 233-239.

Properties of low temperature vacuum annealed CZTS thin films deposited on polymer substrate. / Islam, M. A.; Rahman, K. S.; Haque, F.; Akhtaruzzaman, Md.; Alam, M. M.; Alothman, Z. A.; Sopian, Kamaruzzaman; Amin, Nowshad.

In: Chalcogenide Letters, Vol. 11, No. 5, 2014, p. 233-239.

Research output: Contribution to journalArticle

Islam, MA, Rahman, KS, Haque, F, Akhtaruzzaman, M, Alam, MM, Alothman, ZA, Sopian, K & Amin, N 2014, 'Properties of low temperature vacuum annealed CZTS thin films deposited on polymer substrate', Chalcogenide Letters, vol. 11, no. 5, pp. 233-239.
Islam, M. A. ; Rahman, K. S. ; Haque, F. ; Akhtaruzzaman, Md. ; Alam, M. M. ; Alothman, Z. A. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Properties of low temperature vacuum annealed CZTS thin films deposited on polymer substrate. In: Chalcogenide Letters. 2014 ; Vol. 11, No. 5. pp. 233-239.
@article{01c63f1b2a9d4a93b964aa6cb9d63ad7,
title = "Properties of low temperature vacuum annealed CZTS thin films deposited on polymer substrate",
abstract = "Structural, compositional, morphological and electrical characterizations of the vacuum annealed Cu2ZnSnS4 (CZTS) thin films were carried out in this study. The films were annealed at the low temperature (200 °C) for a long time (1- 3 hours) without excessive sulphur ambient to investigate the possibility of (i) low temperature process and (ii) eluding the post deposition sulphurization process, respectively. The change in the microstructure with subsequent recrystallization and grain growth was observed in annealed thin films. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different for the different films as observed from XRD analysis. The films are found in Zn poor and Cu rich and the ratio of Cu/(Zn+Sn) show that the films are very poor stoichiometric. The lowest resistivity 30.6ω-cm with mobility 6.8 cm2/V-sec and highest resistivity 97.2ω-cm with mobility 5.4 cm2/V-sec was observed for as-deposited and annealed CZTS thin films, respectively.",
keywords = "Curich, CZTS thin films, Polymer substrate, Vacuum annealing",
author = "Islam, {M. A.} and Rahman, {K. S.} and F. Haque and Md. Akhtaruzzaman and Alam, {M. M.} and Alothman, {Z. A.} and Kamaruzzaman Sopian and Nowshad Amin",
year = "2014",
language = "English",
volume = "11",
pages = "233--239",
journal = "Chalcogenide Letters",
issn = "1584-8663",
publisher = "National Institute R and D of Materials Physics",
number = "5",

}

TY - JOUR

T1 - Properties of low temperature vacuum annealed CZTS thin films deposited on polymer substrate

AU - Islam, M. A.

AU - Rahman, K. S.

AU - Haque, F.

AU - Akhtaruzzaman, Md.

AU - Alam, M. M.

AU - Alothman, Z. A.

AU - Sopian, Kamaruzzaman

AU - Amin, Nowshad

PY - 2014

Y1 - 2014

N2 - Structural, compositional, morphological and electrical characterizations of the vacuum annealed Cu2ZnSnS4 (CZTS) thin films were carried out in this study. The films were annealed at the low temperature (200 °C) for a long time (1- 3 hours) without excessive sulphur ambient to investigate the possibility of (i) low temperature process and (ii) eluding the post deposition sulphurization process, respectively. The change in the microstructure with subsequent recrystallization and grain growth was observed in annealed thin films. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different for the different films as observed from XRD analysis. The films are found in Zn poor and Cu rich and the ratio of Cu/(Zn+Sn) show that the films are very poor stoichiometric. The lowest resistivity 30.6ω-cm with mobility 6.8 cm2/V-sec and highest resistivity 97.2ω-cm with mobility 5.4 cm2/V-sec was observed for as-deposited and annealed CZTS thin films, respectively.

AB - Structural, compositional, morphological and electrical characterizations of the vacuum annealed Cu2ZnSnS4 (CZTS) thin films were carried out in this study. The films were annealed at the low temperature (200 °C) for a long time (1- 3 hours) without excessive sulphur ambient to investigate the possibility of (i) low temperature process and (ii) eluding the post deposition sulphurization process, respectively. The change in the microstructure with subsequent recrystallization and grain growth was observed in annealed thin films. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different for the different films as observed from XRD analysis. The films are found in Zn poor and Cu rich and the ratio of Cu/(Zn+Sn) show that the films are very poor stoichiometric. The lowest resistivity 30.6ω-cm with mobility 6.8 cm2/V-sec and highest resistivity 97.2ω-cm with mobility 5.4 cm2/V-sec was observed for as-deposited and annealed CZTS thin films, respectively.

KW - Curich

KW - CZTS thin films

KW - Polymer substrate

KW - Vacuum annealing

UR - http://www.scopus.com/inward/record.url?scp=84901764983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901764983&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84901764983

VL - 11

SP - 233

EP - 239

JO - Chalcogenide Letters

JF - Chalcogenide Letters

SN - 1584-8663

IS - 5

ER -