Properties of exactly compensated semiconductors under excitonic modulation of the charge of deep impurities

S. Zh Karazhanov, T. M. Razykov

Research output: Contribution to journalArticle

Abstract

Properties of exactly compensated semiconductors have been studied under exciton-stimulated modulation of the charge on deep impurities. The electron and hole lifetimes are shown to depend on deep impurity concentration in a nonmonotonic manner. Their maximum values are determined by the exciton concentration and the probability of exciton modulation of trap charges. The results obtained are interpreted in view of the fact that, in a exactly compensated semiconductor, the equilibrium concentration of majority carriers decreases sharply, by several orders of magnitude. Simultaneously, the resistivity grows abruptly. The dependences of the Hall coefficient and Hall mobility on trap concentrations are also nonmonotonic. The exciton density and the probability of exciton modulation of the charge of deep traps are estimated for CdTe crystals at T = 300 K and shallow donor concentration of 1017 cm-3. At high exciton densities, the rate of exciton-stimulated emission of trapped carriers becomes comparable with the rate of their capture, which decreases with increasing deep centre concentration. As a result, the lifetimes become higher. The exciton-stimulated modulation of deep trap occupancy through charge exchange dominates over that associated with energy exchange.

Original languageEnglish
Pages (from-to)638-642
Number of pages5
JournalSemiconductor Science and Technology
Volume15
Issue number6
DOIs
Publication statusPublished - Jun 2000
Externally publishedYes

Fingerprint

Excitons
excitons
Modulation
Impurities
Semiconductor materials
modulation
impurities
traps
life (durability)
Hall mobility
Stimulated emission
majority carriers
LDS 751
stimulated emission
charge exchange
Hall effect
energy transfer
Crystals
electrical resistivity
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Properties of exactly compensated semiconductors under excitonic modulation of the charge of deep impurities. / Karazhanov, S. Zh; Razykov, T. M.

In: Semiconductor Science and Technology, Vol. 15, No. 6, 06.2000, p. 638-642.

Research output: Contribution to journalArticle

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