Properties of a-SiGe thin films on glass by Co-sputtering for photovoltaic absorber application

S. A. Shahahmadi, B. Yeganeh, N. Huda, Nilofar Asim, Mohd Hafidz Ruslan, M. M. Alam, Z. A. AlOthman, Kamaruzzaman Sopian, Nowshad Amin

Research output: Contribution to journalArticle

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Abstract

Non-hydrogenated amorphous Silicon-Germanium (a-SiGe) thin films were deposited at two different base pressures by RF magnetron co-sputtering. Moreover, an ex-situ thermal annealing was carried out to investigate the material properties to be suitable as the bottom cell of multi-junction solar cells. Compositional study of the films using EDX showed Ge-rich thin films with 75 atomic% of Ge. XRD reflection study implied that all samples were entirely amorphous in nature. However, a significant improvement of morphology possibly due to low base pressure was observed while thermal annealing caused peening and reduction of surface inhomogeneity in both as-sputtered films. UV-VIS-IR analysis confirmed the FESEM results. The highest transmittance was observed in the as-deposited sample grown at 4×10-5 Torr, which however reduced after thermal annealing. Tauc's model was implied for band gap determination and band gap energy as low as 1.07 eV was found in the annealed sample grown at lower base pressure (4×10-6 Torr). Electrical properties of films were investigated by Hall effect measurement system and results found the reduction of resistivity with the same trend of optical band gap energy.

Original languageEnglish
Pages (from-to)9275-9280
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number11
DOIs
Publication statusPublished - 1 Nov 2015

Fingerprint

Germanium
base pressure
Silicon
Amorphous silicon
amorphous silicon
Glass
Sputtering
germanium
absorbers
Hot Temperature
sputtering
Annealing
Pressure
Thin films
annealing
glass
Energy gap
low pressure
thin films
peening

Keywords

  • Annealing
  • Optical properties of SiGe
  • SiGe solar sell
  • Sputtering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Properties of a-SiGe thin films on glass by Co-sputtering for photovoltaic absorber application. / Shahahmadi, S. A.; Yeganeh, B.; Huda, N.; Asim, Nilofar; Ruslan, Mohd Hafidz; Alam, M. M.; AlOthman, Z. A.; Sopian, Kamaruzzaman; Amin, Nowshad.

In: Journal of Nanoscience and Nanotechnology, Vol. 15, No. 11, 01.11.2015, p. 9275-9280.

Research output: Contribution to journalArticle

Shahahmadi, S. A. ; Yeganeh, B. ; Huda, N. ; Asim, Nilofar ; Ruslan, Mohd Hafidz ; Alam, M. M. ; AlOthman, Z. A. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Properties of a-SiGe thin films on glass by Co-sputtering for photovoltaic absorber application. In: Journal of Nanoscience and Nanotechnology. 2015 ; Vol. 15, No. 11. pp. 9275-9280.
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