Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs

H. Hussin, N. Soin, Muhammad Faiz Bukhori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Negative bias temperature instability (NBTI) is a well-known p-MOSFET reliability issue which particularly limit the lifetime of PMOSFETs. We present a lifetime prediction framework that integrates the Two-stage NBTI model with new defined energy level for each trap. Based on this new integrated model approach, the degradation is due to the generated defects which consist of positively charged E'center and E'center/Pb H complex. It was found that the 10 years lifetime voltage is |1.2V| with precusor of 2 × 1012 cm-2. At similar number of precursor, the default model which predict the degradation due to the hole trapped in pre-existing defect yield almost 57% lifetime prediction error with stress temperature of 125°C. The verification of the results was done on circuit-level degradation of CMOS inverter which shows that the shift of voltage transfer characteristics for CMOS are15% and 18% for default and intgrated model respectively at room temperature.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
PublisherNano Science and Technology Institute
Pages467-470
Number of pages4
Volume2
ISBN (Print)9781482258271
Publication statusPublished - 2014
EventNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC
Duration: 15 Jun 201418 Jun 2014

Other

OtherNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
CityWashington, DC
Period15/6/1418/6/14

Fingerprint

Degradation
Defects
Electric potential
Electron energy levels
Temperature
Negative bias temperature instability
Networks (circuits)

Keywords

  • E'centers
  • Energy levels
  • Nbti
  • Pmosfet
  • Precursor

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hussin, H., Soin, N., & Bukhori, M. F. (2014). Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (Vol. 2, pp. 467-470). Nano Science and Technology Institute.

Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs. / Hussin, H.; Soin, N.; Bukhori, Muhammad Faiz.

Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2 Nano Science and Technology Institute, 2014. p. 467-470.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hussin, H, Soin, N & Bukhori, MF 2014, Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs. in Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. vol. 2, Nano Science and Technology Institute, pp. 467-470, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, Washington, DC, 15/6/14.
Hussin H, Soin N, Bukhori MF. Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2. Nano Science and Technology Institute. 2014. p. 467-470
Hussin, H. ; Soin, N. ; Bukhori, Muhammad Faiz. / Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs. Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2 Nano Science and Technology Institute, 2014. pp. 467-470
@inproceedings{ab3637dcf0f94fbb8a59a052abb1d494,
title = "Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs",
abstract = "Negative bias temperature instability (NBTI) is a well-known p-MOSFET reliability issue which particularly limit the lifetime of PMOSFETs. We present a lifetime prediction framework that integrates the Two-stage NBTI model with new defined energy level for each trap. Based on this new integrated model approach, the degradation is due to the generated defects which consist of positively charged E'center and E'center/Pb H complex. It was found that the 10 years lifetime voltage is |1.2V| with precusor of 2 × 1012 cm-2. At similar number of precursor, the default model which predict the degradation due to the hole trapped in pre-existing defect yield almost 57{\%} lifetime prediction error with stress temperature of 125°C. The verification of the results was done on circuit-level degradation of CMOS inverter which shows that the shift of voltage transfer characteristics for CMOS are15{\%} and 18{\%} for default and intgrated model respectively at room temperature.",
keywords = "E'centers, Energy levels, Nbti, Pmosfet, Precursor",
author = "H. Hussin and N. Soin and Bukhori, {Muhammad Faiz}",
year = "2014",
language = "English",
isbn = "9781482258271",
volume = "2",
pages = "467--470",
booktitle = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",
publisher = "Nano Science and Technology Institute",

}

TY - GEN

T1 - Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs

AU - Hussin, H.

AU - Soin, N.

AU - Bukhori, Muhammad Faiz

PY - 2014

Y1 - 2014

N2 - Negative bias temperature instability (NBTI) is a well-known p-MOSFET reliability issue which particularly limit the lifetime of PMOSFETs. We present a lifetime prediction framework that integrates the Two-stage NBTI model with new defined energy level for each trap. Based on this new integrated model approach, the degradation is due to the generated defects which consist of positively charged E'center and E'center/Pb H complex. It was found that the 10 years lifetime voltage is |1.2V| with precusor of 2 × 1012 cm-2. At similar number of precursor, the default model which predict the degradation due to the hole trapped in pre-existing defect yield almost 57% lifetime prediction error with stress temperature of 125°C. The verification of the results was done on circuit-level degradation of CMOS inverter which shows that the shift of voltage transfer characteristics for CMOS are15% and 18% for default and intgrated model respectively at room temperature.

AB - Negative bias temperature instability (NBTI) is a well-known p-MOSFET reliability issue which particularly limit the lifetime of PMOSFETs. We present a lifetime prediction framework that integrates the Two-stage NBTI model with new defined energy level for each trap. Based on this new integrated model approach, the degradation is due to the generated defects which consist of positively charged E'center and E'center/Pb H complex. It was found that the 10 years lifetime voltage is |1.2V| with precusor of 2 × 1012 cm-2. At similar number of precursor, the default model which predict the degradation due to the hole trapped in pre-existing defect yield almost 57% lifetime prediction error with stress temperature of 125°C. The verification of the results was done on circuit-level degradation of CMOS inverter which shows that the shift of voltage transfer characteristics for CMOS are15% and 18% for default and intgrated model respectively at room temperature.

KW - E'centers

KW - Energy levels

KW - Nbti

KW - Pmosfet

KW - Precursor

UR - http://www.scopus.com/inward/record.url?scp=84907419343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907419343&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781482258271

VL - 2

SP - 467

EP - 470

BT - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

PB - Nano Science and Technology Institute

ER -