Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling

Z. A. Noor Faizah, I. Ahmad, P. J. Ker, Y. Siti Munirah, R. Mohd Firdaus, S. K. Mah, P. Susthitha Menon N V Visvanathan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Simulations of a computer-generated downscaled device at 14nm gate length of p-type MOSFET is conferred in this paper. The device is scaled down from a 32nm transistor which is from the former research. A combination of insulator-conductor that were used includes a high-k material and a metal gate where in this research, Hafnium Dioxide (HfO2) is used as high-k material and Tungsten Silicide (WSi2) is used as a metal gate. A 14nm p-type transistor was virtually fabricated using ATHENA module and characterized its performance evaluation using ATLAS module in Virtual Wafer Fabrication (VWF) of Silvaco TCAD Tools. The scaled down device is then optimized through process parameter variability using Taguchi Method. The objective is to find the best combination of fabrication parameter in order to achieve the targeted value of threshold voltage (VTH) and leakage current (IOFF) that are predicted by International Technology Roadmap for Semiconductors (ITRS) 2013. The results show that the ideal value for VTH and IOFF are 0.248635±12.7% V and 5.26x10-12 A/um respectively and the results were achieved according to the ITRS specification.

Original languageEnglish
Pages (from-to)97-100
Number of pages4
JournalJournal of Telecommunication, Electronic and Computer Engineering
Volume8
Issue number4
Publication statusPublished - 2016

Fingerprint

Threshold voltage
Transistors
Semiconductor materials
Fabrication
Hafnium
Taguchi methods
Metals
Leakage currents
Tungsten
Specifications

Keywords

  • 14nm p-type MOSFET
  • High-k Dielectric
  • Silvaco
  • Taguchi Method

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling. / Noor Faizah, Z. A.; Ahmad, I.; Ker, P. J.; Siti Munirah, Y.; Mohd Firdaus, R.; Mah, S. K.; N V Visvanathan, P. Susthitha Menon.

In: Journal of Telecommunication, Electronic and Computer Engineering, Vol. 8, No. 4, 2016, p. 97-100.

Research output: Contribution to journalArticle

Noor Faizah, ZA, Ahmad, I, Ker, PJ, Siti Munirah, Y, Mohd Firdaus, R, Mah, SK & N V Visvanathan, PSM 2016, 'Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling', Journal of Telecommunication, Electronic and Computer Engineering, vol. 8, no. 4, pp. 97-100.
Noor Faizah ZA, Ahmad I, Ker PJ, Siti Munirah Y, Mohd Firdaus R, Mah SK et al. Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling. Journal of Telecommunication, Electronic and Computer Engineering. 2016;8(4):97-100.
Noor Faizah, Z. A. ; Ahmad, I. ; Ker, P. J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S. K. ; N V Visvanathan, P. Susthitha Menon. / Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling. In: Journal of Telecommunication, Electronic and Computer Engineering. 2016 ; Vol. 8, No. 4. pp. 97-100.
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