Power penalty assessment of OXADM device model-analytical analysis

Mohd Syuhaimi Ab Rahman, Lee Yee Siong, Chin Chee Khuen, Loh Wen Kit, Tan Wen How

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This OXADM are located in the nodes, which have more than two switching directions in ring networks. The function of OXADM is to flexibility switch the wavelengths among the different input and output ports. Because of the OXADM's imperfect performance, the insertion loss and crosstalk are induced in the system. Analytical modeling method is using to analyze the OXADM structure in crosstalk or power leakage that lead to the power penalty. To overcome this problem, power penalty is needed to be supplied. The insertion of this power penalty depends on few parameters. The parameters that we going to investigate here will be in term of number of operating wavelengths and number of input/output ports as well as the Q factor. The variation of this parameters will affects the amount of the desired power penalty. Simulation results in higher crosstalk or higher power penalty needed as the number of OXADM increases. As the sum of the wavelength and the number of input/output for each OXADM increases, the power penalty will increased as well. Investigation on the maximum Q factors is 6 to get the minimum power penalty at the lowest BER for most of the combination of the sum of the wavelength and the number of input/output for each OXADM.

Original languageEnglish
Pages (from-to)245-249
Number of pages5
JournalJournal of Optical Communications
Volume31
Issue number4
Publication statusPublished - 2010

Fingerprint

penalties
Analytical models
Crosstalk
Wavelength
crosstalk
output
wavelengths
Insertion losses
Q factors
Switches
insertion loss
insertion
flexibility
leakage
switches
rings
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Ab Rahman, M. S., Siong, L. Y., Khuen, C. C., Kit, L. W., & How, T. W. (2010). Power penalty assessment of OXADM device model-analytical analysis. Journal of Optical Communications, 31(4), 245-249.

Power penalty assessment of OXADM device model-analytical analysis. / Ab Rahman, Mohd Syuhaimi; Siong, Lee Yee; Khuen, Chin Chee; Kit, Loh Wen; How, Tan Wen.

In: Journal of Optical Communications, Vol. 31, No. 4, 2010, p. 245-249.

Research output: Contribution to journalArticle

Ab Rahman, MS, Siong, LY, Khuen, CC, Kit, LW & How, TW 2010, 'Power penalty assessment of OXADM device model-analytical analysis', Journal of Optical Communications, vol. 31, no. 4, pp. 245-249.
Ab Rahman, Mohd Syuhaimi ; Siong, Lee Yee ; Khuen, Chin Chee ; Kit, Loh Wen ; How, Tan Wen. / Power penalty assessment of OXADM device model-analytical analysis. In: Journal of Optical Communications. 2010 ; Vol. 31, No. 4. pp. 245-249.
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