Potassium ion-selective field-effect transistor device response in mixed-ion solutions

W. F H Abdullah, M. Othman, M. A M Ali

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We present here the device characteristics of potassium ion (K+) ion-selective field effect ransistor (ISFET) device performance in the presence of K+ and calcium (Ca2+) ion solutions. ISFETs re electrochemical sensors that can detect ion activities based on membrane selectivity. MOSFET emiconductor characterization technique is used to extract threshold voltages of ISFETs in 144 amples within the range -5 to -1 logarithmic value of potassium and calcium ion activity. From the ransfer characteristics, expected voltages are extracted to represent behaviour under constant current iasing for readout interface circuits relating to the device isothermal point. Results show that presence f Ca2+ ion influence the sensitivity graph by shifting the gradient by 17%. Mean value of ISFET voltage response across the interfering ion range results in shifts up to 60 mV. Analysis of variance test indicates a large error variance as expected from the interfering ionic activity purposely added to the solutions. Feeding the extracted data to neural network supervised learning pattern classification algorithm results in 80% output-to-target correlation with misclassification mainly in the low main ion activity compared to the interfering ion and issues of device stabilization.

    Original languageEnglish
    Title of host publicationAIP Conference Proceedings
    Pages540-544
    Number of pages5
    Volume1136
    DOIs
    Publication statusPublished - 2009
    EventInternational Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008 - Selangor
    Duration: 18 Nov 200821 Nov 2008

    Other

    OtherInternational Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008
    CitySelangor
    Period18/11/0821/11/08

    Fingerprint

    potassium
    field effect transistors
    ions
    calcium
    analysis of variance
    electric potential
    threshold voltage
    learning
    readout
    stabilization
    selectivity
    membranes
    gradients
    output
    sensitivity
    shift
    sensors

    Keywords

    • Ion-selective field effect transistor
    • Sensor readout circuit
    • Supervised learning

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Abdullah, W. F. H., Othman, M., & Ali, M. A. M. (2009). Potassium ion-selective field-effect transistor device response in mixed-ion solutions. In AIP Conference Proceedings (Vol. 1136, pp. 540-544) https://doi.org/10.1063/1.3160202

    Potassium ion-selective field-effect transistor device response in mixed-ion solutions. / Abdullah, W. F H; Othman, M.; Ali, M. A M.

    AIP Conference Proceedings. Vol. 1136 2009. p. 540-544.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abdullah, WFH, Othman, M & Ali, MAM 2009, Potassium ion-selective field-effect transistor device response in mixed-ion solutions. in AIP Conference Proceedings. vol. 1136, pp. 540-544, International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008, Selangor, 18/11/08. https://doi.org/10.1063/1.3160202
    Abdullah WFH, Othman M, Ali MAM. Potassium ion-selective field-effect transistor device response in mixed-ion solutions. In AIP Conference Proceedings. Vol. 1136. 2009. p. 540-544 https://doi.org/10.1063/1.3160202
    Abdullah, W. F H ; Othman, M. ; Ali, M. A M. / Potassium ion-selective field-effect transistor device response in mixed-ion solutions. AIP Conference Proceedings. Vol. 1136 2009. pp. 540-544
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